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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 150V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB200N15N3 G DISTI # 30579106 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) TO-263 RoHS: Compliant | 920 |
|
| IPB200N15N3 G DISTI # SP000414740 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB200N15N3GATMA1 DISTI # IPB200N15N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB200N15N3GATMA1 DISTI # SP000414740 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R (Alt: SP000414740) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB200N15N3GATMA1 DISTI # 60R2679 | Infineon Technologies AG | MOSFET, N CH, 150V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes | 0 |
|
| IPB200N15N3 | Infineon Technologies AG | RoHS: Not Compliant | 101 |
|
| IPB200N15N3G | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 127 |
|
| IPB200N15N3 G DISTI # 726-IPB200N15N3G | Infineon Technologies AG | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 69 |
|
| IPB200N15N3GATMA1 DISTI # 7545443 | Infineon Technologies AG | MOSFET N-CHANNEL 150V 50A OPTIMOS3 TO263, PK | 342 |
|
| IPB200N15N3 G | Infineon Technologies AG | 747 | ||
| IPB200N15N3GATMA1 DISTI # 1775559 | Infineon Technologies AG | MOSFET, N CH, 50A, 150V, PG-TO263-3 RoHS: Compliant | 547 |
|
| IPB200N15N3 G DISTI # C1S322000088900 | Infineon Technologies AG | Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 920 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPB200N15N3 G OMO.#: OMO-IPB200N15N3-G |
MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB200N15N3GATMA1 OMO.#: OMO-IPB200N15N3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB200N15N OMO.#: OMO-IPB200N15N-1190 |
ブランドニューオリジナル |
|
Mfr.#: IPB200N15N3 OMO.#: OMO-IPB200N15N3-1190 |
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB200N15N3GATMA1 |
MOSFET N-CH 150V 50A TO263-3 |
|
Mfr.#: IPB200N15N3GS OMO.#: OMO-IPB200N15N3GS-1190 |
ブランドニューオリジナル |
|
Mfr.#: IPB200N25N3 G OMO.#: OMO-IPB200N25N3-G-1190 |
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) |
|
Mfr.#: IPB200N25N3G(SP000677896 |
ブランドニューオリジナル |
|
Mfr.#: IPB20N03L OMO.#: OMO-IPB20N03L-1190 |
ブランドニューオリジナル |
|
Mfr.#: IPB20N60C3 OMO.#: OMO-IPB20N60C3-1190 |
ブランドニューオリジナル |