IPW90R1K2C3FKSA1

IPW90R1K2C3FKSA1
Mfr. #:
IPW90R1K2C3FKSA1
メーカー:
Infineon Technologies
説明:
MOSFET LOW POWER_LEGACY
ライフサイクル:
メーカー新製品
データシート:
IPW90R1K2C3FKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
商標名:
CoolMOS
包装:
チューブ
高さ:
21.1 mm
長さ:
16.13 mm
幅:
5.21 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPW90R1K2C3FKSA1 SP000413754
単位重量:
1.340411 oz
Tags
IPW90R1K2C3, IPW90R1K2, IPW90R1K, IPW90R1, IPW90R, IPW9, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; Package / Case:TO-247; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
モデル メーカー 説明 ストック 価格
IPW90R1K2C3FKSA1
DISTI # V99:2348_06378617
Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
135
  • 100:$1.6960
  • 25:$1.7927
  • 10:$1.9945
  • 1:$2.2273
IPW90R1K2C3FKSA1
DISTI # IPW90R1K2C3FKSA1-ND
Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW90R1K2C3FKSA1
    DISTI # 26197464
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    135
    • 100:$1.6960
    • 25:$1.7927
    • 10:$1.9945
    • 6:$2.2273
    IPW90R1K2C3
    DISTI # 726-IPW90R1K2C3
    Infineon Technologies AGMOSFET N-Ch 900V 5.1A TO247-3 CoolMOS C3
    RoHS: Compliant
    95
    • 1:$2.2700
    • 10:$1.9300
    • 100:$1.5500
    IPW90R1K2C3FKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      IPW90R1K2C3FKSA1Infineon Technologies AGPower Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      431
      • 1000:$1.1100
      • 500:$1.1600
      • 100:$1.2100
      • 25:$1.2600
      • 1:$1.3600
      IPW90R1K2C3FKSA1
      DISTI # 1107434
      Infineon Technologies AGMOSFET N-CHANNEL 900V 5.1A TO247-3, PK348
      • 6:£1.6380
      • 12:£1.2550
      • 60:£1.1270
      • 120:£1.0000
      • 300:£0.9800
      IPW90R1K2C3FKSA1
      DISTI # IPW90R1K2C3FKSA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,900V,3.2A,83W,PG-TO247-384
      • 1:$2.1300
      • 3:$1.8400
      • 10:$1.4800
      • 30:$1.2800
      IPW90R1K2C3FKSA1
      DISTI # 2480722
      Infineon Technologies AGMOSFET, N-CH, 900V, 5.1A, TO-247-3
      RoHS: Compliant
      0
      • 100:$2.4600
      • 10:$3.0600
      • 1:$3.6000
      IPW90R1K2C3FKSA1
      DISTI # C1S322000339406
      Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-247
      RoHS: Compliant
      84
      • 19:$2.5200
      • 2:$7.6700
      IPW90R1K2C3FKSA1
      DISTI # C1S322000626746
      Infineon Technologies AGMOSFETs
      RoHS: Compliant
      135
      • 100:$1.6960
      • 25:$1.8013
      • 10:$2.0004
      • 1:$2.2373
      画像 モデル 説明
      IPW90R1K2C3FKSA1

      Mfr.#: IPW90R1K2C3FKSA1

      OMO.#: OMO-IPW90R1K2C3FKSA1

      MOSFET LOW POWER_LEGACY
      IPW90R1K0C3FKSA1

      Mfr.#: IPW90R1K0C3FKSA1

      OMO.#: OMO-IPW90R1K0C3FKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 900V 5.7A TO-247
      IPW90R1K2C3FKSA1

      Mfr.#: IPW90R1K2C3FKSA1

      OMO.#: OMO-IPW90R1K2C3FKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 900V 5.1A TO-247
      IPW90R1K03

      Mfr.#: IPW90R1K03

      OMO.#: OMO-IPW90R1K03-1190

      ブランドニューオリジナル
      IPW90R1K0C3,9R1K0C,

      Mfr.#: IPW90R1K0C3,9R1K0C,

      OMO.#: OMO-IPW90R1K0C3-9R1K0C--1190

      ブランドニューオリジナル
      IPW90R1K2C

      Mfr.#: IPW90R1K2C

      OMO.#: OMO-IPW90R1K2C-1190

      ブランドニューオリジナル
      IPW90R1K2C3 PB-FREE

      Mfr.#: IPW90R1K2C3 PB-FREE

      OMO.#: OMO-IPW90R1K2C3-PB-FREE-1190

      ブランドニューオリジナル
      IPW90R1K2C3,9R1K2

      Mfr.#: IPW90R1K2C3,9R1K2

      OMO.#: OMO-IPW90R1K2C3-9R1K2-1190

      ブランドニューオリジナル
      IPW90R1K2C3S

      Mfr.#: IPW90R1K2C3S

      OMO.#: OMO-IPW90R1K2C3S-1190

      ブランドニューオリジナル
      IPW90R1K0C3

      Mfr.#: IPW90R1K0C3

      OMO.#: OMO-IPW90R1K0C3-126

      IGBT Transistors MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3
      可用性
      ストック:
      Available
      注文中:
      4000
      数量を入力してください:
      IPW90R1K2C3FKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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