IPB083N10N3 G

Mfr. #:: IPB083N10N3 G
メーカー:: Infineon Technologies
説明:: MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: IPB083N10N3 G データシート
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詳しくは:: IPB083N10N3 G 詳しくは

製品属性
属性値

Tags: IPB083N10N3G, IPB083N10, IPB083, IPB08, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB083N10N3 G 詳しくは

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB083N10N3G DISTI # 31073262	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 RoHS: Compliant	284	18:$1.4625
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.6048 5000:$0.6284 2000:$0.6615 1000:$0.7087
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GATMA1 DISTI # V72:2272_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB083N10N3GATMA1 DISTI # V36:1790_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.5242 500000:$0.5246 100000:$0.5797 10000:$0.6897 1000:$0.7088
IPB083N10N3G DISTI # SP000458812	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R (Alt: SP000458812) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 6000	10000:€0.4559 6000:€0.4909 4000:€0.5319 2000:€0.5799 1000:€0.7089
IPB083N10N3GXT DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.4569 6000:$0.4649 4000:$0.4809 2000:$0.4999 1000:$0.5179
IPB083N10N3GATMA1 DISTI # 47Y8048	Infineon Technologies AG	MOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V RoHS Compliant: Yes	758	500:$0.8650 250:$0.9210 100:$0.9780 50:$1.0800 25:$1.1700 10:$1.2700 1:$1.4800
IPB083N10N3 G DISTI # 726-IPB083N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	13901	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 726-IPB083N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	2169	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 8977361P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO263, RL	3216	2000:£0.4840 800:£0.6140 400:£0.6940 80:£0.9000
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO263-3	664	500:$0.6081 100:$0.6306 25:$0.6757 5:$0.7523 1:$0.8514
IPB083N10N3 G DISTI # TMOSP9693	Infineon Technologies AG	N-CH 100V80A8mOhm TO263-3 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$0.7216 2000:$0.6804 3000:$0.6391 5000:$0.5773 7000:$0.5567
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3	739	500:£0.6670 250:£0.7100 100:£0.7530 10:£1.0300 1:£1.3100
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3 RoHS: Compliant	758	1000:$1.0200 500:$1.2900 100:$1.4600 10:$1.9000 1:$2.2200
IPB083N10N3G	Infineon Technologies AG	100V,80A,N Channel Power MOSFET	800	1:$1.0500 100:$0.8800 500:$0.7700 1000:$0.7500

画像	モデル	説明
	Mfr.#: IPB083N10N3 G OMO.#: OMO-IPB083N10N3-G	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
	Mfr.#: IPB083N10N3GATMA1 OMO.#: OMO-IPB083N10N3GATMA1	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
	Mfr.#: IPB083N15N5LFATMA1 OMO.#: OMO-IPB083N15N5LFATMA1	MOSFET
	Mfr.#: IPB083N10N3G OMO.#: OMO-IPB083N10N3G-1190	Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263
	Mfr.#: IPB083N10N3G. OMO.#: OMO-IPB083N10N3G--1190	ブランドニューオリジナル
	Mfr.#: IPB083N10N3 OMO.#: OMO-IPB083N10N3-1190	ブランドニューオリジナル
	Mfr.#: IPB083N10N3 G OMO.#: OMO-IPB083N10N3-G-1190	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
	Mfr.#: IPB083N10N3G , 2SD1936T OMO.#: OMO-IPB083N10N3G-2SD1936T-1190	ブランドニューオリジナル
	Mfr.#: IPB083N10N3GATMA1 OMO.#: OMO-IPB083N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 80A TO263-3
	Mfr.#: IPB083N10N3GATMA1 , 2SD1 OMO.#: OMO-IPB083N10N3GATMA1-2SD1-1190	ブランドニューオリジナル

IPB083N10N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes