We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP603S2LHUMA1 DISTI # V36:1790_06390875 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 0 |
|
| BSP603S2LHUMA1 DISTI # 31229021 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 90 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: BSP603S2L) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel | Asia - 4000 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP603S2LHUMA1) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 |
|
| BSP603S2LHUMA1 DISTI # SP000431792 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: SP000431792) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| BSP603S2LNT | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 83663 |
|
| BSP603S2LHUMA1 DISTI # 4622935 | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, PK | 940 |
|
| BSP603S2LHUMA1 DISTI # 4622935P | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, RL | 9071 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,55V,5.2A,1.8W,SOT223 | 3809 |
|
| BSP603S2L | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1395 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSP603S2L .. OMO.#: OMO-BSP603S2L--1190 |
ブランドニューオリジナル |