SI8409DB-T1-E1

SI8409DB-T1-E1
Mfr. #:
SI8409DB-T1-E1
メーカー:
Vishay
説明:
MOSFET P-CH 30V 4.6A 2X2 4-MFP
ライフサイクル:
メーカー新製品
データシート:
SI8409DB-T1-E1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI8409DB-T1-E1 詳しくは
製品属性
属性値
メーカー
Vishay Siliconix
製品カテゴリ
ICチップ
シリーズ
TrenchFETR
包装
Digi-ReelR代替パッケージ
パーツエイリアス
SI8409DB-E1
取り付けスタイル
SMD / SMT
商標名
TrenchFET / MICRO FOOT
パッケージ-ケース
4-XFBGA, CSPBGA
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
4-Microfoot
構成
シングルデュアルドレイン
FETタイプ
MOSFET Pチャネル、金属酸化物
パワーマックス
1.47W
トランジスタタイプ
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
-
FET機能
標準
Current-Continuous-Drain-Id-25°C
4.6A (Ta)
Rds-On-Max-Id-Vgs
46 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
ゲートチャージ-Qg-Vgs
26nC @ 4.5V
Pd-電力損失
1.47 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
35 ns
立ち上がり時間
35 ns
Vgs-Gate-Source-Voltage
12 V
Id-連続-ドレイン-電流
- 3.6 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 30 V
Rds-On-Drain-Source-Resistance
1.052 Ohms
トランジスタ-極性
Pチャネル
典型的なターンオフ遅延時間
140 ns
典型的なターンオン遅延時間
20 ns
Qg-Gate-Charge
17 nC
フォワード-相互コンダクタンス-最小
6.4 S
チャネルモード
強化
Tags
SI840, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT
***ical
Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
*** Source Electronics
MOSFET P-CH 30V 4.6A 2X2 4-MFP
***i-Key
MOSFET P-CH 30V 4.6A 4MICROFOOT
***ark
P Ch Mosfet, -30V, 6.3A, Micro Foot; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V Rohs Compliant: No
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
モデル メーカー 説明 ストック 価格
SI8409DB-T1-E1
DISTI # V72:2272_09216553
Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant
4407
  • 3000:$0.4274
  • 1000:$0.4304
  • 500:$0.5504
  • 250:$0.6208
  • 100:$0.6226
  • 25:$0.7627
  • 10:$0.7658
  • 1:$0.8855
SI8409DB-T1-E1
DISTI # V36:1790_09216553
Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant
3000
  • 3000:$0.4304
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1CT-ND
Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13394In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1DKR-ND
Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13394In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1TR-ND
Vishay SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 3000:$0.4928
SI8409DB-T1-E1
DISTI # 27003823
Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant
4407
  • 3000:$0.4274
  • 1000:$0.4304
  • 500:$0.5504
  • 250:$0.6208
  • 100:$0.6226
  • 25:$0.7627
  • 16:$0.7658
SI8409DB-T1-E1
DISTI # 29546570
Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant
3000
  • 3000:$0.4867
SI8409DB-T1-E1
DISTI # 30743480
Vishay IntertechnologiesTrans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R
RoHS: Compliant
3000
  • 3000:$0.4304
SI8409DB-T1-E1
DISTI # SI8409DB-T1-E1
Vishay IntertechnologiesTrans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8409DB-T1-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.4649
  • 6000:$0.4509
  • 12000:$0.4329
  • 18000:$0.4209
  • 30000:$0.4099
SI8409DB-T1-E1
DISTI # 18X0030
Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:1.47W, RoHS Compliant: Yes0
  • 1:$1.1200
  • 10:$0.9220
  • 25:$0.8510
  • 50:$0.7790
  • 100:$0.7080
  • 500:$0.6090
  • 1000:$0.4800
SI8409DB-T1-E1
DISTI # 51K7013
Vishay IntertechnologiesP CH MOSFET, -30V, 6.3A, MICRO FOOT,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):65mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes0
  • 1:$0.4480
  • 3000:$0.4480
SI8409DB-T1-E1.
DISTI # 30AC0210
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.4480
  • 3000:$0.4480
SI8409DB-T1-E1Vishay IntertechnologiesSingle P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT
RoHS: Compliant
6000Reel
  • 3000:$0.4050
SI8409DB-T1-E1
DISTI # 781-SI8409DB-E1
Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
RoHS: Compliant
4620
  • 1:$1.1200
  • 10:$0.9220
  • 100:$0.7080
  • 500:$0.6090
  • 1000:$0.4800
  • 3000:$0.4480
SI8409DB-T1-E1Vishay Semiconductors4600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2340
  • 2052:$0.3750
  • 445:$0.3900
  • 1:$1.5000
SI8409DB-T1-E1Vishay Siliconix 2925
  • 5:$1.1250
  • 19:$0.7313
  • 70:$0.4219
  • 239:$0.3600
  • 515:$0.3150
  • 1224:$0.2925
SI8409DB-T1-E1
DISTI # XSFP00000107897
Vishay Siliconix 
RoHS: Compliant
4038
  • 3000:$0.8100
  • 4038:$0.7364
SI8409DB-T1-E1
DISTI # C1S803601003786
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
4407
  • 250:$0.6193
  • 100:$0.6210
  • 25:$0.7598
  • 10:$0.7629
SI8409DB-T1-E1
DISTI # C1S803601906641
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
3000
  • 3000:$0.4299
SI8409DB-T1-E1Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
RoHS: Compliant
Americas - 6000
    画像 モデル 説明
    SI8409DB-T1-E1

    Mfr.#: SI8409DB-T1-E1

    OMO.#: OMO-SI8409DB-T1-E1

    MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
    SI8409DB-T1-E1

    Mfr.#: SI8409DB-T1-E1

    OMO.#: OMO-SI8409DB-T1-E1-VISHAY

    MOSFET P-CH 30V 4.6A 2X2 4-MFP
    可用性
    ストック:
    Available
    注文中:
    1500
    数量を入力してください:
    SI8409DB-T1-E1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.44
    $0.44
    10
    $0.42
    $4.17
    100
    $0.39
    $39.49
    500
    $0.37
    $186.45
    1000
    $0.35
    $351.00
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