SCT2160KEC

Mfr. #:: SCT2160KEC
メーカー:: Rohm Semiconductor
説明:: Darlington Transistors MOSFET FET: 1200V 20A 160mOhm
ライフサイクル:: メーカー新製品
データシート:: SCT2160KEC データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SCT2160KEC 詳しくは

製品属性
属性値

メーカー: ロームセミコンダクター

製品カテゴリ: FET-シングル

シリーズ: SCT2160KE

包装: チューブ

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

テクノロジー: SiC

作動温度: 175°C (TJ)

取付タイプ: スルーホール

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: TO-247

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 165W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 1200V (1.2kV)

入力-静電容量-Ciss-Vds: 1200pF @ 800V

FET機能: 炭化ケイ素（SiC）

Current-Continuous-Drain-Id-25°C: 22A (Tc)

Rds-On-Max-Id-Vgs: 208 mOhm @ 7A, 18V

Vgs-th-Max-Id: 4V @ 2.5mA

ゲートチャージ-Qg-Vgs: 62nC @ 18V

Pd-電力損失: 165 W

立ち下がり時間: 27 ns

立ち上がり時間: 25 ns

Id-連続-ドレイン-電流: 22 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 1200 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 160 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 67 ns

典型的なターンオン遅延時間: 23 ns

Qg-Gate-Charge: 62 nC

フォワード-相互コンダクタンス-最小: 2.4 S

Tags: SCT2160, SCT216, SCT21, SCT2, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT2160KEC 説明

***ure Electronics: 1200 V 160 mOhm 20 A Surface Flange Mount 2G SiC MosFet - TO-247-3

***Components: SiC N-Channel MOSFET, 22 A, 1200 V, 3-Pin TO-247 ROHM SCT2160KEC

***ical: Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 1200V 22A TO-247

***ronik: SiC-N 1200V 22A 160mOhm TO247-3

***: FET: 1200V, 20A, 160MOHM, TO24

***ark: Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:165W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C

***nell: MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22A; Napięcie drenu / źródła Vds:1.2kV; Rezystancja przewodzenia Rds(on):0.16ohm; Napięcie Vgs pomiaru Rds(on):18V; Napięcie progowe Vgs:4V; Straty mocy Pd:165W; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Temperatura robocza, min.:-55°C

SCT2160KEC 詳しくは

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

N-Channel SiC Power MOSFETs: ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Industrial Product Solutions: ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions: ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

Market price

モデル	メーカー	説明	ストック	価格
SCT2160KEC DISTI # 30612591	ROHM Semiconductor	SCT2160KEC RoHS: Compliant	2	2:$15.0450
SCT2160KEC DISTI # SCT2160KEC-ND	ROHM Semiconductor	MOSFET N-CH 1200V 22A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	250:$11.2871 100:$12.3794 25:$13.4716 10:$14.5640 1:$16.0200
SCT2160KEC DISTI # C1S625901535563	ROHM Semiconductor	MOSFETs RoHS: Compliant	30	26:$27.6000 6:$29.7000 2:$31.3000
SCT2160KEC DISTI # C1S625901135062	ROHM Semiconductor	MOSFETs RoHS: Compliant	2	1:$11.8000
SCT2160KEC DISTI # SCT2160KEC	ROHM Semiconductor	Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2160KEC) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$10.3900 10:$10.1900 25:$9.9900 50:$9.7900 100:$9.1900 500:$8.6900 1000:$8.3900
SCT2160KEC DISTI # 06X0711	ROHM Semiconductor	MOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	1026	1:$13.9000 10:$12.7800 25:$12.2500 50:$11.6500 100:$11.0400
SCT2160KEC DISTI # 755-SCT2160KEC	ROHM Semiconductor	MOSFET 1200V20A160mOhm Silicon Carbide SiC RoHS: Compliant	0	1:$13.9000 10:$12.7800 25:$12.2500 100:$11.0400
SCT2160KEC DISTI # 1246853	ROHM Semiconductor	SIC MOSFET N-CHANNEL 1200V 22A TO247, EA	1	1:£12.1900 5:£10.9700 10:£9.9800 25:£9.1500 50:£8.6900
SCT2160KEC DISTI # 2345466	ROHM Semiconductor	MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3 RoHS: Compliant	746	1:£11.5400 5:£11.0500 10:£9.7200 50:£9.4700 100:£9.2100
SCT2160KEC	ROHM Semiconductor	MOSFET 1200V20A160mOhm Silicon Carbide SiC RoHS: Compliant	Americas -
SCT2160KEC DISTI # 2345466	ROHM Semiconductor	MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3 RoHS: Compliant	720	1:$22.0000 10:$20.2300 25:$19.3900 100:$19.1100

画像	モデル	説明
	Mfr.#: SCT2160KEC OMO.#: OMO-SCT2160KEC-ROHM-SEMI	Darlington Transistors MOSFET FET: 1200V 20A 160mOhm
	Mfr.#: SCT210F OMO.#: OMO-SCT210F-1190	ブランドニューオリジナル
	Mfr.#: SCT210F3 OMO.#: OMO-SCT210F3-1190	ブランドニューオリジナル
	Mfr.#: SCT2110 OMO.#: OMO-SCT2110-1190	ブランドニューオリジナル
	Mfr.#: SCT2120AFC OMO.#: OMO-SCT2120AFC-ROHM-SEMI	MOSFET N-CH 650V 29A TO-220AB
	Mfr.#: SCT214GZ OMO.#: OMO-SCT214GZ-1190	ブランドニューオリジナル
	Mfr.#: SCT2160KE OMO.#: OMO-SCT2160KE-1190	ブランドニューオリジナル
	Mfr.#: SCT2160KECU OMO.#: OMO-SCT2160KECU-1190	ブランドニューオリジナル
	Mfr.#: SCT2167CSOG OMO.#: OMO-SCT2167CSOG--1	Driver, LED controller, 5÷45mA, Channels:8, 3÷5.5V, SOP16
	Mfr.#: SCT2168CSOG OMO.#: OMO-SCT2168CSOG-1190	ブランドニューオリジナル

SCT2160KEC

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes