IPB80P03P4L-04

Mfr. #:: IPB80P03P4L-04
メーカー:: Infineon Technologies
説明:: IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
ライフサイクル:: メーカー新製品
データシート:: IPB80P03P4L-04 データシート
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詳しくは:: IPB80P03P4L-04 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: OptiMOS-P2

包装: リール

パーツエイリアス: IPB80P03P4L04ATMA1 IPB80P03P4L04XT SP000396284

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

トランジスタタイプ: 1 P-Channel

Pd-電力損失: 137 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 40 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 5 V

Id-連続-ドレイン-電流: - 80 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 30 V

Rds-On-Drain-Source-Resistance: 4.1 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 140 ns

典型的なターンオン遅延時間: 17 ns

Qg-Gate-Charge: 125 nC

Tags: IPB80P03P4L, IPB80P03P4, IPB80P03, IPB80P, IPB8, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80P03P4L-04 詳しくは

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB80P03P4L04ATMA1 DISTI # V72:2272_06383799	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	948	500:$0.8985 250:$0.9931 100:$1.1469 25:$1.4540 10:$1.6054 1:$1.8114
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.0238
IPB80P03P4L04ATMA1 DISTI # 31280268	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	948	500:$0.8985 250:$0.9931 100:$1.1469 25:$1.4540 10:$1.6054 8:$1.8114
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P03P4L04ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.9239 2000:$0.8909 4000:$0.8589 6000:$0.8299 10000:$0.8149
IPB80P03P4L04ATMA1 DISTI # SP000396284	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000396284) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1569 2000:€0.8989 4000:€0.8339 6000:€0.8079 10000:€0.7769
IPB80P03P4L04ATMA1 DISTI # 34AC1662	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	995	1:$2.0400 10:$1.8000 25:$1.6200 50:$1.4500 100:$1.2600 250:$1.0800 500:$0.9860 1000:$0.9340
IPB80P03P4L-04 DISTI # 726-IPB80P03P4L-04	Infineon Technologies AG	MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 RoHS: Compliant	7653	1:$1.8900 10:$1.6100 100:$1.2900 500:$1.1300 1000:$0.9310
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	955	5:$3.0100 25:$2.6200 100:$2.1400
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	955	5:£0.8590 25:£0.8550 100:£0.8510

画像	モデル	説明
	Mfr.#: IPB80P03P4L-04 OMO.#: OMO-IPB80P03P4L-04	MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
	Mfr.#: IPB80P03P4-05 OMO.#: OMO-IPB80P03P4-05	MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
	Mfr.#: IPB80P04P4L-04 OMO.#: OMO-IPB80P04P4L-04	MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
	Mfr.#: IPB80P04P4L04ATMA1 OMO.#: OMO-IPB80P04P4L04ATMA1	MOSFET P-CHANNEL
	Mfr.#: IPB80P04P405ATMA1 OMO.#: OMO-IPB80P04P405ATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH TO263-3
	Mfr.#: IPB80P04P407ATMA1 OMO.#: OMO-IPB80P04P407ATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH TO263-3
	Mfr.#: IPB80P04P405XT OMO.#: OMO-IPB80P04P405XT-1190	Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P04P405ATMA1)
	Mfr.#: IPB80P03P4-07 OMO.#: OMO-IPB80P03P4-07-1190	ブランドニューオリジナル
	Mfr.#: IPB80P03P4L-04 OMO.#: OMO-IPB80P03P4L-04-126	IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
	Mfr.#: IPB80P04P4-05 OMO.#: OMO-IPB80P04P4-05-126	IGBT Transistors MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2

IPB80P03P4L-04

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes