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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD60R520CPATMA1 DISTI # IPD60R520CPATMA1-ND | Infineon Technologies AG | MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD60R520CP DISTI # IPD60R520CP | Infineon Technologies AG | Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R520CP) RoHS: Compliant Min Qty: 491 Container: Bulk | Americas - 0 |
|
| IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 650V 6.8A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R520CPBTMA1) Min Qty: 491 Container: Bulk | Americas - 0 |
|
| IPD60R520CPATMA1 DISTI # IPD60R520CPATMA1 | Infineon Technologies AG | - Bulk (Alt: IPD60R520CPATMA1) Min Qty: 410 Container: Bulk | Americas - 0 |
|
| IPD60R520CP DISTI # 726-IPD60R520CP | Infineon Technologies AG | MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP RoHS: Compliant | 0 | |
| IPD60R520CPATMA1 DISTI # 726-IPD60R520CPATMA1 | Infineon Technologies AG | MOSFET N-Ch 600V 6.8A DPAK-2 RoHS: Compliant | 0 | |
| IPD60R520CP | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 4840 |
|
| IPD60R520CPBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 7500 |
|
| IPD60R520CPATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant | 17500 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: IPD60R520C6ATMA1 OMO.#: OMO-IPD60R520C6ATMA1 |
MOSFET N-Ch 600V 8.1A DPAK-2 |
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Mfr.#: IPD60R520CPATMA1 OMO.#: OMO-IPD60R520CPATMA1 |
MOSFET N-Ch 600V 6.8A DPAK-2 |
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Mfr.#: IPD60R520C6BTMA1 |
MOSFET N-CH 600V 8.1A TO252 |
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Mfr.#: IPD60R520C6 OMO.#: OMO-IPD60R520C6-1190 |
MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6 |
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Mfr.#: IPD60R520CPATMA1 |
MOSFET N-CH 600V 6.8A TO-252 |
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|
Mfr.#: IPD60R520CPBTMA1 |
MOSFET N-CH 600V 6.8A TO-252 |
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|
Mfr.#: IPD60R520CP OMO.#: OMO-IPD60R520CP-126 |
IGBT Transistors MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP |
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Mfr.#: IPD60R520C6ATMA1 |
RF Bipolar Transistors MOSFET N-Ch 600V 8.1A DPAK-2 |
