NIMD6001ANR2G

Mfr. #:: NIMD6001ANR2G
メーカー:: ON Semiconductor
説明:: RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
ライフサイクル:: メーカー新製品
データシート:: NIMD6001ANR2G データシート
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HTML Datasheet:: NIMD6001ANR2G Datasheet NIMD6001ANR2G Datasheet (P4-P6)NIMD6001ANR2G Datasheet (P7-P9)
ECAD Model:

製品属性
属性値

メーカー: オン・セミコンダクター

製品カテゴリ: PMIC-配電スイッチ、ロードドライバー

シリーズ: NIMD6001A

包装: テープ＆リール（TR）

単位重量: 0.019048 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

入力方式: -

作動温度: -55°C ~ 150°C (TJ)

出力タイプ: Nチャネル

特徴: -

チャネル数: 2 Channel

インターフェース: オンオフ

サプライヤー-デバイス-パッケージ: 8-SOIC

比率-入力：出力: 1899/12/30 1:01:00

構成: デュアル

出力数: 2

電圧供給-Vcc-Vdd: 不要

障害保護: -

出力構成: ローサイド

Rds-On-Typ: 60 mOhm

電圧負荷: 60V (Max)

電流-出力-最大: 3.3A

スイッチタイプ: リレー、ソレノイドドライバー

トランジスタタイプ: 2 N-Channel

Id-連続-ドレイン-電流: 3.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 67 V

Rds-On-Drain-Source-Resistance: 110 mOhms

トランジスタ-極性: Nチャネル

Tags: NIMD6001A, NIMD60, NIMD6, NIMD, NIM

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NIMD6001ANR2G 説明

***et: Transistor MOSFET Array Dual N-CH 60V 3.3A 8-Pin SOIC T/R

***emi: Dual N-Channel MOSFET Driver with Diagnostic Output

***enic: IC PWR DRIVER N-CHAN 1:1 8SOIC

***or: BUFFER/INVERTER PERIPHL DRIVER

***(Formerly Allied Electronics): IRF7342PBF Dual P-channel MOSFET Transistor; 3.4 A; 55 V; 8-Pin SOIC

***itex: Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8

***et Europe: Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube

***ure Electronics: Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET 2xP-Ch. 3,4A/55V SO8 IRF 7342 TRPBF

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V

***roFlash: Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

***ineon SCT: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***th Star Micro: Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

***ure Electronics: Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8

***enic: 30V 4.1A 1.3W 42m´Î@10V5.7A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W

***(Formerly Allied Electronics): NTMD4N03R2G Dual N-channel MOSFET Transistor; 4 A; 30 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 48 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

***emi: Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8

***nell: MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8

***ark: MOSFET, COMP, H-BRIDE, 30V, SO8; Channel Type:Complementary N and P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. of Pins:8Pins RoHS Compliant: Yes

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC

***nell: MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

モデル	メーカー	説明	ストック	価格
NIMD6001ANR2G DISTI # NIMD6001ANR2G-ND	ON Semiconductor	IC MOSFET DVR 60V 3.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NIMD6001ANR2G DISTI # NIMD6001ANR2G	ON Semiconductor	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001ANR2G) Min Qty: 447 Container: Bulk	Americas - 0	4470:$0.6909 2235:$0.7079 1341:$0.7169 894:$0.7269 447:$0.7319
NIMD6001ANR2G	ON Semiconductor	Buffer/Inverter Based Peripheral Driver RoHS: Compliant	14	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100

画像	モデル	説明
	Mfr.#: NIMD6001ANR2G OMO.#: OMO-NIMD6001ANR2G-ON-SEMICONDUCTOR	RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
	Mfr.#: NIMD6001A OMO.#: OMO-NIMD6001A-1190	ブランドニューオリジナル
	Mfr.#: NIMD6001AR2G OMO.#: OMO-NIMD6001AR2G-1190	ブランドニューオリジナル
	Mfr.#: NIMD6001N OMO.#: OMO-NIMD6001N-1190	ブランドニューオリジナル
	Mfr.#: NIMD6001NR2G OMO.#: OMO-NIMD6001NR2G-1190	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001NR2G)

NIMD6001ANR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes