CSD87312Q3E

Mfr. #:: CSD87312Q3E
説明:: MOSFET 2N-CH 30V 27A 8VSON
ライフサイクル:: メーカー新製品
データシート:: CSD87312Q3E データシート
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詳しくは:: CSD87312Q3E 詳しくは CSD87312Q3E Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-アレイ

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-VSON (5x6)

構成: デュアルコモンソース

FETタイプ: 2 N-Channel (Dual) Common Source

パワーマックス: 2.5W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 1250pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 27A

Rds-On-Max-Id-Vgs: 33 mOhm @ 7A , 8V

Vgs-th-Max-Id: 1.3V @ 250μA

ゲートチャージ-Qg-Vgs: 8.2nC @ 4.5V

Pd-電力損失: 2.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 2.8 ns

立ち上がり時間: 16 ns

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 27 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 38 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 17 ns

典型的なターンオン遅延時間: 7.8 ns

Qg-Gate-Charge: 6.3 nC

フォワード-相互コンダクタンス-最小: 39 S

Tags: CSD8731, CSD873, CSD87, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD87312Q3E 説明

***as Instruments: 30V, N ch NexFET MOSFET™, dual common source SON3x3, 38mOhm 8-VSON-CLIP -55 to 150

***p One Stop Global: Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R

***Components: MOSFET Dual N-Ch 30V 27A NexFET VSON8EP

***ark: 30V Powerblock N ch MOSFET

***i-Key: MOSFET 2N-CH 30V 27A 8VSON

***ical: High Frequency Synchronous Power Module

CSD87312Q3E 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD87312Q3E DISTI # 296-35526-1-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2270In Stock	1000:$0.5234 500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
CSD87312Q3E DISTI # 296-35526-6-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2270In Stock	1000:$0.5234 500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
CSD87312Q3E DISTI # 296-35526-2-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4506 2500:$0.4743
CSD87312Q3E DISTI # CSD87312Q3E	Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R (Alt: CSD87312Q3E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD87312Q3E DISTI # CSD87312Q3E	Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD87312Q3E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4469 5000:$0.4249 10000:$0.4109 15000:$0.3969 25000:$0.3859
CSD87312Q3E	Dual 30-V N-Channel NexFET Power MOSFETs	7050	1000:$0.3500 750:$0.3900 500:$0.4900 250:$0.6000 100:$0.6500 25:$0.7600 10:$0.8200 1:$0.9200
CSD87312Q3E DISTI # 595-CSD87312Q3E	MOSFET Dual 30V N-CH NexFET Pwr MOSFETs RoHS: Compliant	737	1:$1.0100 10:$0.8600 100:$0.6630 500:$0.5860 1000:$0.4620 2500:$0.4100
CSD87312Q3E	Power Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	7560	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000

画像	モデル	説明
	Mfr.#: CSD87502Q2 OMO.#: OMO-CSD87502Q2	MOSFET 30V, N ch NexFET MOSFETG , dual SON2x2, 42mOhm 6-WSON -55 to 150
	Mfr.#: CSD87381PT OMO.#: OMO-CSD87381PT	MOSFET Sync Buck NexFET Pwr Block II
	Mfr.#: CSD87381PEVM-603 OMO.#: OMO-CSD87381PEVM-603	Power Management IC Development Tools CSD87381P EVAL MOD
	Mfr.#: CSD87353Q5D-1 OMO.#: OMO-CSD87353Q5D-1-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD87353Q5D. OMO.#: OMO-CSD87353Q5D--TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD87313DMST OMO.#: OMO-CSD87313DMST-TEXAS-INSTRUMENTS	MOSFET 2 N-CHANNEL 30V 8WSON
	Mfr.#: CSD87503Q3ET OMO.#: OMO-CSD87503Q3ET-TEXAS-INSTRUMENTS	30-V DUAL N-CHANNEL MOSFET, COMM
	Mfr.#: CSD87312Q3E OMO.#: OMO-CSD87312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 30V 27A 8VSON
	Mfr.#: CSD87335Q3D OMO.#: OMO-CSD87335Q3D-TEXAS-INSTRUMENTS	MOSFET N-CH 30V POWERBLOCK
	Mfr.#: CSD87381PEVM-603 OMO.#: OMO-CSD87381PEVM-603-TEXAS-INSTRUMENTS	CSD87381 EVALUATION BOARD

CSD87312Q3E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes