IRG4PF50WPBF

Mfr. #:: IRG4PF50WPBF
メーカー:: Infineon Technologies
説明:: IGBT Transistors 900V Warp 20-100kHz
ライフサイクル:: メーカー新製品
データシート:: IRG4PF50WPBF データシート
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ECAD Model:
詳しくは:: IRG4PF50WPBF 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: IGBT-シングル

シリーズ: -

包装: バルク

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

入力方式: 標準

取付タイプ: スルーホール

サプライヤー-デバイス-パッケージ: TO-247AC

構成: 独身

パワーマックス: 200W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 51A

電圧-コレクタ-エミッタ-故障-最大: 900V

IGBTタイプ: -

Current-Collector-Pulsed-Icm: 204A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 28A

スイッチング-エネルギー: 190μJ (on), 1.06mJ (off)

ゲートチャージ: 160nC

Td-on-off-25°C: 29ns/110ns

テスト条件: 720V, 28A, 5 Ohm, 15V

Pd-電力損失: 200 W

最高作動温度: + 150 C

最低作動温度: - 55 C

コレクター-エミッター-電圧-VCEO-マックス: 900 V

コレクター-エミッター-飽和-電圧: 2.25 V

連続-コレクター-電流-at-25-C: 51 A

ゲート-エミッタ-リーク-電流: 100 nA

最大ゲート-エミッタ-電圧: +/- 20 V

連続-コレクタ-電流-Ic-Max: 51 A

Tags: IRG4PF50WP, IRG4PF, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PF50WPBF 説明

***Components: In a Tube of 25, Infineon IRG4PF50WPBF IGBT, 51 A 900 V, 3-Pin TO-247AC

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WPBF Series 900 V 28 A N-Channel Latest Technology IGBT - TO-247AC

***ernational Rectifier: 900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package

***ical: Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC

***ied Electronics & Automation: 900V WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

***eco: 900V 51A WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC<AZ

***ineon: Target Applications: Pump; Refridgeration

***ronik: IGBT TO-247 RoHSconf

***i-Key: IGBT WARP 900V 51A TO247AC

*** Source Electronics: IGBT 900V 51A 200W TO247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

***ark: MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

***nell: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:900V; Current Ic Continuous a Max:51A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:900V; Current, Icm Pulsed:204A; Device Marking:IRG4PF50WPBF; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:220ns; Time, Fall Max:220ns; Time, Rise:26ns; Transistors, No. of:1

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

IRG4PF50WPBF 詳しくは

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IRG4PF50WPBF DISTI # V99:2348_13892015	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	2095	1000:$4.3860 500:$5.0400 100:$5.6740 25:$6.6520 1:$8.4733
IRG4PF50WPBF DISTI # V36:1790_13892015	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	0	1000:$3.5960 500:$4.0890 100:$4.6360 25:$5.2760 1:$6.0260
IRG4PF50WPBF DISTI # IRG4PF50WPBF-ND	Infineon Technologies AG	IGBT 900V 51A 200W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	727In Stock	1000:$3.8511 500:$4.4216 100:$5.0777 25:$5.8480 1:$6.7900
IRG4PF50WPBF DISTI # 32333330	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	9612	2500:$3.4947 1000:$3.6234 500:$4.1679 250:$4.5639 100:$4.7817 25:$5.5143 10:$5.7816 4:$6.3954
IRG4PF50WPBF DISTI # 27012185	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	2095	1000:$4.3860 500:$5.0400 100:$5.6740 25:$6.6520 2:$7.7030
IRG4PF50WPBF DISTI # SP001533582	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: SP001533582) RoHS: Compliant Min Qty: 1	Europe - 405	1000:€2.6900 500:€2.8900 100:€2.9900 50:€3.0900 25:€3.1900 10:€3.3900 1:€3.6900
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 104 Container: Bulk	Americas - 0	1040:$2.9900 520:$3.0900 312:$3.1900 208:$3.2900 104:$3.4900
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 400	Asia - 0	20000:$3.2422 10000:$3.2837 4000:$3.3264 2000:$3.3701 1200:$3.4612 800:$3.5574 400:$3.6590
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	4000:$3.1900 2400:$3.2900 1600:$3.3900 800:$3.4900 400:$3.5900
IRG4PF50WPBF DISTI # 38K2941	Infineon Technologies AG	IGBT Single Transistor, 51 A, 2.7 V, 200 W, 900 V, TO-247AC, 3 RoHS Compliant: Yes	0	500:$4.2500 250:$4.6600 100:$4.8800 50:$5.2500 25:$5.6300 10:$5.9000 1:$6.5200
IRG4PF50WPBF DISTI # 70017078	Infineon Technologies AG	900V Warp 20-100 kHz Discrete IGBT IN A TO-247AC Package RoHS: Compliant	310	1:$9.7300 10:$8.5800 100:$7.4900 500:$6.4900 1000:$5.7200
IRG4PF50WPBF DISTI # 942-IRG4PF50WPBF	Infineon Technologies AG	IGBT Transistors 900V Warp 20-100kHz RoHS: Compliant	367	1:$6.4600 10:$5.8400 25:$5.5700 100:$4.8300 250:$4.6100 500:$4.2100 1000:$3.6600
IRG4PF50WPBF	International Rectifier	Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	1788	1000:$3.1800 500:$3.3500 100:$3.4900 25:$3.6400 1:$3.9200
IRG4PF50WPBF DISTI # 5412060	Infineon Technologies AG	TRANSISTOR IGBT N-CH 900V 51A TO247AC, EA	2195	5:£2.6900 1:£2.7500
IRG4PF50WPBF	International Rectifier		22
IRG4PF50W DISTI # IRG4PF50WPBF	Infineon Technologies AG	Transistor: IGBT,900V,28A,200W,TO247-3	50	1:$6.1600 3:$5.5400 10:$4.7300 50:$4.2500
IRG4PF50WPBF DISTI # 8650659	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC RoHS: Compliant	70	500:$6.4700 250:$7.0900 100:$7.4300 25:$8.5600 10:$8.9800 1:$9.9400
IRG4PF50WPBF DISTI # 8650659	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC	0	100:£3.7700 50:£4.0500 10:£4.3300 5:£5.0300 1:£5.5300
IRG4PF50WPBF DISTI # XSKDRABS0026534	Infineon Technologies AG	RoHS: Compliant	255 in Stock0 on Order	255:$4.7280 175:$5.0640
IRG4PF50WPBF DISTI # IGBT1767	Infineon Technologies AG	IGBT TO-247 RoHS: Compliant	Stock DE - 1225Stock HK - 0Stock US - 0	25:$4.1400 75:$3.8900 125:$3.8300 225:$3.7600 400:$3.5400
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	900V 51A 200W TO 247AC RoHS: Compliant	900	5:€4.0500 25:€3.4500 100:€3.1500 200:€2.8800

画像	モデル	説明
	Mfr.#: IRG4PF50WPBF OMO.#: OMO-IRG4PF50WPBF	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50WDPBF OMO.#: OMO-IRG4PF50WDPBF	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50WD-201P OMO.#: OMO-IRG4PF50WD-201P-INFINEON-TECHNOLOGIES	IGBT 900V 51A 200W TO247AC
	Mfr.#: IRG4PF50WDPBF OMO.#: OMO-IRG4PF50WDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50W OMO.#: OMO-IRG4PF50W-1190	IGBT Transistor, N-CHAN, TO-247AC
	Mfr.#: IRG4PF50WD OMO.#: OMO-IRG4PF50WD-1190	ブランドニューオリジナル
	Mfr.#: IRG4PF50WDPBF,G4PF50WD,I OMO.#: OMO-IRG4PF50WDPBF-G4PF50WD-I-1190	ブランドニューオリジナル
	Mfr.#: IRG4PF50WDPBF. OMO.#: OMO-IRG4PF50WDPBF--1190	ブランドニューオリジナル
	Mfr.#: IRG4PF50WPB OMO.#: OMO-IRG4PF50WPB-1190	ブランドニューオリジナル
	Mfr.#: IRG4PF50WPBF,G4PF50W,IRG OMO.#: OMO-IRG4PF50WPBF-G4PF50W-IRG-1190	ブランドニューオリジナル

IRG4PF50WPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes