IRG4PF stock, IRG4PF, IRG4PF50WPBF


PartNumber	IRG4PF50WPBF	IRG4PF50WDPBF	IRG4PF50WD-201P
Description	IGBT Transistors 900V Warp 20-100kHz	IGBT Transistors 900V Warp 20-100kHz	IGBT 900V 51A 200W TO247AC
Manufacturer	Infineon	Infineon	-
Product Category	IGBT Transistors	IGBT Transistors	-
RoHS	Y	Y	-
Technology	Si	Si	-
Package / Case	TO-247-3	TO-247-3	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	900 V	900 V	-
Collector Emitter Saturation Voltage	2.25 V	2.25 V	-
Maximum Gate Emitter Voltage	20 V	20 V	-
Continuous Collector Current at 25 C	51 A	51 A	-
Pd Power Dissipation	200 W	200 W	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Packaging	Tube	Tube	-
Continuous Collector Current Ic Max	51 A	51 A	-
Height	20.7 mm	20.7 mm	-
Length	15.87 mm	15.87 mm	-
Width	5.31 mm	5.31 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Gate Emitter Leakage Current	100 nA	100 nA	-
Product Type	IGBT Transistors	IGBT Transistors	-
Factory Pack Quantity	400	400	-
Subcategory	IGBTs	IGBTs	-
Part # Aliases	SP001533582	SP001547862	-
Unit Weight	1.340411 oz	1.340411 oz	-

Search Part Number : "IRG4PF", Match & Start with "IRG4PF" - Total : 13

IRG4PF