IXKP20N60C5M

IXKP20N60C5M
Mfr. #:
IXKP20N60C5M
メーカー:
Littelfuse
説明:
MOSFET 20 Amps 600V
ライフサイクル:
メーカー新製品
データシート:
IXKP20N60C5M データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXKP20N60C5M DatasheetIXKP20N60C5M Datasheet (P4)
ECAD Model:
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
7.6 A
Rds On-ドレイン-ソース抵抗:
200 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.5 V
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
33 W
構成:
独身
チャネルモード:
強化
商標名:
COOLMOS
包装:
チューブ
シリーズ:
IXKP20N60
トランジスタタイプ:
1 N-Channel
タイプ:
CoolMOSパワーMOSFET
ブランド:
IXYS
立ち下がり時間:
5 ns
製品タイプ:
MOSFET
立ち上がり時間:
5 ns
ファクトリーパックの数量:
50
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
50 ns
典型的なターンオン遅延時間:
10 ns
単位重量:
0.081130 oz
Tags
IXKP2, IXKP, IXK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 7.6A TO220ABFP
***S
new, original packaged
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 650V, 9A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 29W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ical
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 650V, 8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Bulk
***ark
Mosfet, N-Ch, 600V, 20A, To-220Fm; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ronik
N-CH 600V 20A 200mOhm TO220FP-3
***ure Electronics
Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS™ Power Mosfet - TO-220-3FP
*** Electronics
INFINEON SPA20N60C3 TransMOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP RoHS
***ponent Stockers USA
20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***roFlash
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5
***ment14 APAC
MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V
***icroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
*** Source Electronics
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
モデル メーカー 説明 ストック 価格
IXKP20N60C5M
DISTI # IXKP20N60C5M-ND
IXYS CorporationMOSFET N-CH 600V 7.6A TO220FP
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$3.9352
画像 モデル 説明
IXKP20N60C5M

Mfr.#: IXKP20N60C5M

OMO.#: OMO-IXKP20N60C5M

MOSFET 20 Amps 600V
IXKP20N60C5

Mfr.#: IXKP20N60C5

OMO.#: OMO-IXKP20N60C5-IXYS-CORPORATION

MOSFET N-CH 600V 20A TO220AB
IXKP20N60C5M

Mfr.#: IXKP20N60C5M

OMO.#: OMO-IXKP20N60C5M-IXYS-CORPORATION

MOSFET 20 Amps 600V
可用性
ストック:
Available
注文中:
2000
数量を入力してください:
IXKP20N60C5Mの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
50
$3.90
$195.00
100
$3.75
$375.00
250
$3.20
$800.00
500
$3.04
$1 520.00
1000
$2.56
$2 560.00
2500
$2.20
$5 500.00
皮切りに
最新の製品
Top