FQPF6N80CT

Mfr. #:: FQPF6N80CT
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 800V 5.5A TO-220F
ライフサイクル:: メーカー新製品
データシート:: FQPF6N80CT データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: FET-シングル

包装: チューブ

単位重量: 0.080072 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-220-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 51 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 44 ns

立ち上がり時間: 65 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 5.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 800 V

Rds-On-Drain-Source-Resistance: 2.5 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 47 ns

典型的なターンオン遅延時間: 26 ns

フォワード-相互コンダクタンス-最小: 5.4 S

チャネルモード: 強化

Tags: FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQPF6N80CT 説明

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F

***et Europe: Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail

***nell: MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

モデル	メーカー	説明	ストック	価格
FQPF6N80CT DISTI # FQPF6N80CT-ND	ON Semiconductor	MOSFET N-CH 800V 5.5A TO-220F RoHS: Compliant Min Qty: 1 Container: Tube	757In Stock	500:$1.3296 100:$1.7095 10:$2.1270 1:$2.3600
FQPF6N80CT DISTI # FQPF6N80CT	ON Semiconductor	Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8239 2000:$0.8189 4000:$0.8079 6000:$0.7979 10000:$0.7779
FQPF6N80CT DISTI # FQPF6N80CT	ON Semiconductor	Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.3049 10:€1.0679 25:€0.9129 50:€0.8289 100:€0.8159 500:€0.8029 1000:€0.7909
FQPF6N80CT	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	70	1000:$1.1800 500:$1.2400 100:$1.2900 25:$1.3500 1:$1.4500
FQPF6N80CT DISTI # 512-FQPF6N80CT	ON Semiconductor	MOSFET 800V N-Ch Adv Q-FET C-Series RoHS: Compliant	734	1:$2.0400 10:$1.7300 100:$1.3900 500:$1.2100 1000:$1.0100 2000:$0.9330 5000:$0.8980

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