CSD19533KCS

Mfr. #:: CSD19533KCS
説明:: Darlington Transistors MOSFET 100V 8.7mOhm N-CH Pwr MOSFET
ライフサイクル:: メーカー新製品
データシート:: CSD19533KCS データシート
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詳しくは:: CSD19533KCS 詳しくは CSD19533KCS Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD19533KCS

包装: チューブ

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

商標名: NexFET

パッケージ-ケース: TO-220-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 188 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 2 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 86 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 10.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 12 ns

典型的なターンオン遅延時間: 7 ns

Qg-Gate-Charge: 27 nC

フォワード-相互コンダクタンス-最小: 115 S

チャネルモード: 強化

Tags: CSD19533, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19533KCS 説明

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm 3-TO-220 -55 to 175

***ark: Mosfet, N Channel, 100V, 100A, To-220-3 Rohs Compliant: Yes

***i-Key: MOSFET N-CH 100V 100A TO220-3

***S: new, original packaged

CSD19533KCS 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD19533KCS DISTI # V39:1801_07248856	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	345	500:$0.8623 100:$0.8628 10:$0.9586 1:$1.0651
CSD19533KCS DISTI # 296-37482-5-ND	MOSFET N-CH 100V 86A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	5239In Stock	5000:$0.7508 2500:$0.7796 1000:$0.8374 500:$1.0106 100:$1.2994 50:$1.4438 10:$1.6170 1:$1.7900
CSD19533KCS DISTI # 30330761	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	345	100:$0.9950 50:$1.2330
CSD19533KCS DISTI # CSD19533KCS	Trans MOSFET N-CH 100V 100A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19533KCS) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$0.7609 600:$0.7249 1100:$0.6999 2500:$0.6769 5000:$0.6579
CSD19533KCS DISTI # 29X0648	MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0087ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,MSL:-RoHS Compliant: Yes	253	1:$1.7100 10:$1.4400
CSD19533KCS DISTI # 73AC9828	MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0087ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,PowerRoHS Compliant: Yes	0	1:$1.5500 10:$1.3100 100:$1.0500 500:$0.9190
CSD19533KCS	100V, 8.7mOhm, TO-220 N-Channel NexFET&#153,Power MOSFET	5348	1000:$0.6000 750:$0.6500 500:$0.7900 250:$0.9500 100:$1.0200 25:$1.1800 10:$1.2700 1:$1.4100
CSD19533KCS DISTI # CSD19533KCS	Transistor: N-MOSFET,unipolar,100V,100A,188W,TO220-3	200	1:$1.6200 3:$1.4600
CSD19533KCS DISTI # 2419496	MOSFET, N CHANNEL, 100V, 100A, TO-220-3 RoHS: Compliant	253	5:£1.0900 25:£0.9880 100:£0.7950 250:£0.7450 500:£0.6950
CSD19533KCS DISTI # C1S746203699655	Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	345	100:$1.0012 50:$1.2205

画像	モデル	説明
	Mfr.#: CSD19538Q3AT OMO.#: OMO-CSD19538Q3AT	MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150
	Mfr.#: CSD19535KCS OMO.#: OMO-CSD19535KCS	MOSFET 100V N-CH NexFET Pwr MOSFET
	Mfr.#: CSD19536KTTT OMO.#: OMO-CSD19536KTTT	MOSFET 100V N-Channel NexFET Power MOSFET
	Mfr.#: CSD19534KCS OMO.#: OMO-CSD19534KCS	MOSFET 100V N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD19506KCS OMO.#: OMO-CSD19506KCS	MOSFET 80V N-CH Power MOSFET
	Mfr.#: CSD19503KCS OMO.#: OMO-CSD19503KCS-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 94A TO220-3
	Mfr.#: CSD19535KTTT OMO.#: OMO-CSD19535KTTT-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
	Mfr.#: CSD19502Q5B OMO.#: OMO-CSD19502Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 100A 8SON
	Mfr.#: CSD19532KTT OMO.#: OMO-CSD19532KTT-TEXAS-INSTRUMENTS	Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R
	Mfr.#: CSD19538Q2 OMO.#: OMO-CSD19538Q2-TEXAS-INSTRUMENTS	MOSFET NCH 100V 14.4A SON

CSD19533KCS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes