MTB2P50ET4G

MTB2P50ET4G
Mfr. #:
MTB2P50ET4G
メーカー:
ON Semiconductor
説明:
P CHANNEL MOSFET, -500V, 2A, D2-PAK, Transistor Polarity:P Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:-500V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:10V, Thre
ライフサイクル:
メーカー新製品
データシート:
MTB2P50ET4G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
Tags
MTB2P50ET, MTB2P50E, MTB2P, MTB2, MTB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK
***et
Trans MOSFET P-CH 500V 2A 3-Pin(2+Tab) D2PAK T/R
***ark
P Channel Mosfet, -500V, 2A, D2-Pak; Transistor Polarity:p Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2A; On Resistance Rds(On):6Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***th Star Micro
P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage high speed switching applications in power supplies converters and PWM motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
モデル メーカー 説明 ストック 価格
MTB2P50ET4G
DISTI # 09R9555
ON SemiconductorP CHANNEL MOSFET, -500V, 2A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:-500V,On Resistance Rds(on):6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes0
    MTB2P50ET4G
    DISTI # 863-MTB2P50ET4G
    ON SemiconductorMOSFET PFET 500V 2A 6O
    RoHS: Compliant
    0
      画像 モデル 説明
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      OMO.#: OMO-MTB2P50-1190

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      OMO.#: OMO-MTB2P50E-1190

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      ブランドニューオリジナル
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      OMO.#: OMO-MTB2P50EG-1190

      ブランドニューオリジナル
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      OMO.#: OMO-MTB2P50EG-P50EG-1190

      ブランドニューオリジナル
      MTB2P50ET4

      Mfr.#: MTB2P50ET4

      OMO.#: OMO-MTB2P50ET4-1190

      MOSFET Transistor, P-Channel, TO-263AB
      MTB2P50ET4G

      Mfr.#: MTB2P50ET4G

      OMO.#: OMO-MTB2P50ET4G-1190

      P CHANNEL MOSFET, -500V, 2A, D2-PAK, Transistor Polarity:P Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:-500V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:10V, Thre
      可用性
      ストック:
      Available
      注文中:
      5500
      数量を入力してください:
      MTB2P50ET4Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
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