SIE806DF-T1-E3

Mfr. #:: SIE806DF-T1-E3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
ライフサイクル:: メーカー新製品
データシート:: SIE806DF-T1-E3 データシート
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ECAD Model:

製品属性
属性値

メーカー: Vishay / Siliconix

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

パーツエイリアス: SIE806DF-E3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PolarPAK-10

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 5.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 15 ns 10 ns

立ち上がり時間: 160 ns 50 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 41.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 1.7 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 85 ns

典型的なターンオン遅延時間: 125 ns 20 ns

チャネルモード: 強化

Tags: SIE806, SIE80, SIE8, SIE

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE806DF-T1-E3 説明

***ure Electronics: Single N-Channel 30 V 0.0017 Ohms Surface Mount Power Mosfet - PolarPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:202A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Base Number:806; Current Id Max:60A; N-channel Gate Charge:75nC; On State Resistance @ Vgs = 4.5V:2.1mohm; On State resistance @ Vgs = 10V:1.7mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.6V

Market price

モデル	メーカー	説明	ストック	価格
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIE806DF-T1-E3 DISTI # SIE806DF-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIE806DF-T1-E3 DISTI # 781-SIE806DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.7mohm @ 10V RoHS: Compliant	0
SIE806DF-T1-E3	Vishay Intertechnologies		157
SIE806DF-T1-E3 DISTI # 1497640	Vishay Intertechnologies	MOSFET, N, POLAR PAK RoHS: Compliant	0	1:$4.9200 10:$4.2800 50:$3.6100 100:$3.3800 500:$3.1200 1000:$2.9500

画像	モデル	説明
	Mfr.#: SIE806DF-T1-GE3 OMO.#: OMO-SIE806DF-T1-GE3-VISHAY	MOSFET 30V 202A 125W 1.7mohm @ 10V
	Mfr.#: SIE806DF-T1-E3 OMO.#: OMO-SIE806DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
	Mfr.#: SIE806DF OMO.#: OMO-SIE806DF-1190	ブランドニューオリジナル
	Mfr.#: SIE806DF,SIE806DF-T1-E3 OMO.#: OMO-SIE806DF-SIE806DF-T1-E3-1190	ブランドニューオリジナル

SIE806DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes