IRF7907PBF

Mfr. #:: IRF7907PBF
メーカー:: Infineon Technologies
説明:: MOSFET 2N-CH 30V 9.1A/11A 8SOIC
ライフサイクル:: メーカー新製品
データシート:: IRF7907PBF データシート
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HTML Datasheet:: IRF7907PBF Datasheet IRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: HEXFETR

包装: チューブ代替包装

単位重量: 0.019048 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 2W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 850pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 9.1A, 11A

Rds-On-Max-Id-Vgs: 16.4 mOhm @ 9.1A, 10V

Vgs-th-Max-Id: 2.35V @ 25μA

ゲートチャージ-Qg-Vgs: 10nC @ 4.5V

Pd-電力損失: 2.0 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 3.4 ns 5.3 ns

立ち上がり時間: 9.3 ns 14 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 9.1 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 20.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 8 ns 13 ns

典型的なターンオン遅延時間: 6 ns 8 ns

Qg-Gate-Charge: 6.7 nC

チャネルモード: 強化

Tags: IRF7907, IRF790, IRF79, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7907PBF 説明

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

***p One Stop Japan: Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube

***ical: Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

***Components: MOSFET N-Channel 30V 9.1A/11A SOIC8

***i-Key: MOSFET N-CHAN DUAL 30V 8-SOIC

***ronik: 2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***nell: MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm

***ment14 APAC: MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W

Market price

モデル	メーカー	説明	ストック	価格
IRF7907PBF DISTI # IRF7907PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.1A/11A 8SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF7907PBF DISTI # 70017286	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8 RoHS: Compliant	0	3800:$1.3400 7600:$1.3130 19000:$1.2730 38000:$1.2190 95000:$1.1390
IRF7907PBF DISTI # 942-IRF7907PBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX RoHS: Compliant	0
IRF7907PBF	International Rectifier		2849
IRF7907PBF DISTI # 1843031	Infineon Technologies AG	MOSFET,NN CH,30V,9.1A,SO8 RoHS: Compliant	0	1:$1.7200 10:$1.5300 100:$1.1900 500:$0.9820 1000:$0.7760

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IRF7907PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes