SI6423DQ-T1-E3

Mfr. #:: SI6423DQ-T1-E3
メーカー:: Vishay
説明:: Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
ライフサイクル:: メーカー新製品
データシート:: SI6423DQ-T1-E3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI6423DQ-T1

単位重量: 0.005573 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-TSSOP (0.173", 4.40mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-TSSOP

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 1.05W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 8.2A (Ta)

Rds-On-Max-Id-Vgs: 8.5 mOhm @ 9.5A, 4.5V

Vgs-th-Max-Id: 800mV @ 400μA

ゲートチャージ-Qg-Vgs: 110nC @ 5V

Pd-電力損失: 1.05 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 75 ns

立ち上がり時間: 75 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 8.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 12 V

Rds-On-Drain-Source-Resistance: 8.5 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 270 ns

典型的なターンオン遅延時間: 50 ns

チャネルモード: 強化

Tags: SI6423DQ-T, SI6423, SI642, SI64, SI6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6423DQ-T1-E3 説明

***ure Electronics: Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8

***et Europe: Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R

***i-Key: MOSFET P-CH 12V 8.2A 8-TSSOP

***ronik: P-CH 12V 9A 9mOhm TSSOP-8 RoHSconf

***: P-CHANNEL 12-V (D-S) MOSFET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9.5A; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.0085ohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.4V; Power Dissipation, Pd:1.05W ;RoHS Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
SI6423DQ-T1-E3 DISTI # V72:2272_09215414	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.6685 1000:$0.7170 500:$0.8462 250:$0.9589 100:$0.9692 25:$1.1909 10:$1.2049 1:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # 16623336	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.7509
SI6423DQ-T1-E3 DISTI # 31353840	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	9:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6423DQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7939 6000:$0.7699 12000:$0.7389 18000:$0.7179 30000:$0.6989
SI6423DQ-T1-E3 DISTI # 06J8059	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9580 1000:$0.9010 2000:$0.8550 4000:$0.7700 6000:$0.7410 10000:$0.7130
SI6423DQ-T1-E3 DISTI # 85W2157	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0068ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.5W RoHS Compliant: No	0	1:$2.0000 25:$1.9000 50:$1.7600 100:$1.5900 250:$1.4200 500:$1.2400 1000:$1.0600
SI6423DQ-T1-E3 DISTI # 781-SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8 RoHS: Compliant	2530	1:$1.7000 10:$1.4100 100:$1.1000 500:$0.9550 1000:$0.7920 3000:$0.7370
SI6423DQ-T1-E3	Vishay Siliconix	8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	4	3:$1.8188 1:$2.1825
SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8	Americas -
SI6423DQ-T1-E3 DISTI # C1S803601453370	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3001:$0.6808

画像	モデル	説明
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3-VISHAY	Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
	Mfr.#: SI6423DQ-T1-E3-CUT TAPE OMO.#: OMO-SI6423DQ-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI6423DQ OMO.#: OMO-SI6423DQ-1190	ブランドニューオリジナル
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3-VISHAY	MOSFET P-CH 12V 8.2A 8-TSSOP
	Mfr.#: SI6423DQ-T1-GE3CT-ND OMO.#: OMO-SI6423DQ-T1-GE3CT-ND-1190	ブランドニューオリジナル

SI6423DQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes