SIS424DN-T1-GE3

SIS424DN-T1-GE3
Mfr. #:
SIS424DN-T1-GE3
メーカー:
Vishay / Siliconix
説明:
MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
ライフサイクル:
メーカー新製品
データシート:
SIS424DN-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
ビシェイ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
商標名:
TrenchFET、PowerPAK
包装:
リール
シリーズ:
SIS
ブランド:
Vishay / Siliconix
製品タイプ:
MOSFET
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SIS424DN-GE3
Tags
SIS42, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 20V 35A PPAK 1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19.6A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
モデル メーカー 説明 ストック 価格
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 35A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4389
SIS424DN-T1-GE3
DISTI # SIS424DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 19.6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS424DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SIS424DN-T1-GE3.
    DISTI # 61AC1927
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:19.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:39W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.5100
    • 6000:$0.4950
    • 12000:$0.4750
    • 18000:$0.4610
    • 30000:$0.4490
    SIS424DN-T1-GE3
    DISTI # 781-SIS424DN-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 35A 39W
    RoHS: Compliant
    0
      SIS424DN-T1-GE3Vishay IntertechnologiesMOSFET 20V 35A 39W
      RoHS: Compliant
      Americas -
        画像 モデル 説明
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
        SIS424DN-T1-GE3

        Mfr.#: SIS424DN-T1-GE3

        OMO.#: OMO-SIS424DN-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 20V 35A 39W
        可用性
        ストック:
        Available
        注文中:
        5500
        数量を入力してください:
        SIS424DN-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $0.99
        $0.99
        10
        $0.82
        $8.20
        100
        $0.63
        $62.90
        500
        $0.54
        $270.50
        1000
        $0.43
        $427.00
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