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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FGW15N120HD DISTI # 49X9255 | Fuji Electric Co Ltd | IGBT, SINGLE, 1.2KV, 31A, TO-247-3,DC Collector Current:31A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:155W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes | 0 | |
| FGW15N120HD DISTI # 70241437 | Fuji Electric Co Ltd | IC,IGBT,High-Speed V-Series,1200V,15A,1550W,TP-247-P2 RoHS: Compliant | 0 |
|
| FGW15N120H DISTI # FE0000000000862 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FGW15N120H-S31PP-P2 DISTI # FE0000000001754 | Fuji Electric Co Ltd | DISCRETE IGBT- High Speed V RoHS: Compliant | 0 in Stock0 on Order |
|
| FGW15N120HD-S31PP-P2 DISTI # FE0000000000863 | Fuji Electric Co Ltd | DISCRETE IGBT- High Speed V RoHS: Compliant | 0 in Stock0 on Order |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: FGW15N120H OMO.#: OMO-FGW15N120H-1190 |
Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FGW15N120HD OMO.#: OMO-FGW15N120HD-1190 |
IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3 |
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Mfr.#: FGW15N120VD OMO.#: OMO-FGW15N120VD-1190 |
IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins: |
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Mfr.#: FGW15N40 OMO.#: OMO-FGW15N40-1190 |
ブランドニューオリジナル |
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Mfr.#: FGW15N40A OMO.#: OMO-FGW15N40A-1190 |
ブランドニューオリジナル |