IRF1503SPBF

IRF1503SPBF
Mfr. #:
IRF1503SPBF
メーカー:
Infineon Technologies
説明:
RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
ライフサイクル:
メーカー新製品
データシート:
IRF1503SPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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HTML Datasheet:
IRF1503SPBF DatasheetIRF1503SPBF Datasheet (P4-P6)IRF1503SPBF Datasheet (P7-P9)IRF1503SPBF Datasheet (P10-P11)
ECAD Model:
製品属性
属性値
メーカー
IR
製品カテゴリ
FET-シングル
包装
チューブ
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
TO-252-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
200 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
48 ns
立ち上がり時間
130 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
190 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Rds-On-Drain-Source-Resistance
3.3 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
59 ns
典型的なターンオン遅延時間
17 ns
Qg-Gate-Charge
130 nC
チャネルモード
強化
Tags
IRF1503S, IRF1503, IRF150, IRF15, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 30V, 190A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:190A; Resistance, Rds On:0.0033ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:960A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0033ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:4V
モデル メーカー 説明 ストック 価格
IRF1503SPBF
DISTI # IRF1503SPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 75A D2PAK
RoHS: Compliant
Min Qty: 4000
Container: Tube
Limited Supply - Call
    IRF1503SPBF
    DISTI # SP001561632
    Infineon Technologies AGTrans MOSFET N-CH 30V 190A 3-Pin(2+Tab) D2PAK (Alt: SP001561632)
    RoHS: Compliant
    Min Qty: 1
    Europe - 1230
    • 1:€1.8900
    • 10:€1.4900
    • 25:€1.3900
    • 50:€1.2900
    • 100:€1.2900
    • 500:€1.2900
    • 1000:€1.2900
    IRF1503SPBF
    DISTI # 70016945
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 75A,D2Pak,PD 200W,VGS +/-20
    RoHS: Compliant
    0
    • 3200:$3.6500
    • 6400:$3.5770
    • 16000:$3.4680
    • 32000:$3.3220
    • 80000:$3.1030
    IRF1503SPBF
    DISTI # 942-IRF1503SPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
    RoHS: Compliant
    0
      IRF1503SPBFInternational Rectifier 
      RoHS: Compliant
      Europe - 700
        IRF1503SPBF
        DISTI # XSKDRABS0006644
        Infineon Technologies AG 
        RoHS: Compliant
        1230
        • 1230:$1.9900
        • 1000:$2.1400
        画像 モデル 説明
        IRF1503STRLPBF

        Mfr.#: IRF1503STRLPBF

        OMO.#: OMO-IRF1503STRLPBF

        MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        IRF150P220XKMA1

        Mfr.#: IRF150P220XKMA1

        OMO.#: OMO-IRF150P220XKMA1-1190

        TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P220XKMA1)
        IRF1503STRRPBF

        Mfr.#: IRF1503STRRPBF

        OMO.#: OMO-IRF1503STRRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 75A D2PAK
        IRF150

        Mfr.#: IRF150

        OMO.#: OMO-IRF150-1190

        Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
        IRF1503S

        Mfr.#: IRF1503S

        OMO.#: OMO-IRF1503S-1190

        ブランドニューオリジナル
        IRF150D1

        Mfr.#: IRF150D1

        OMO.#: OMO-IRF150D1-1190

        ブランドニューオリジナル
        IRF150N

        Mfr.#: IRF150N

        OMO.#: OMO-IRF150N-1190

        ブランドニューオリジナル
        IRF151

        Mfr.#: IRF151

        OMO.#: OMO-IRF151-1190

        Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
        IRF1503SPBF

        Mfr.#: IRF1503SPBF

        OMO.#: OMO-IRF1503SPBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        IRF1503PBF

        Mfr.#: IRF1503PBF

        OMO.#: OMO-IRF1503PBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        可用性
        ストック:
        Available
        注文中:
        3000
        数量を入力してください:
        IRF1503SPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $2.08
        $2.08
        10
        $1.98
        $19.81
        100
        $1.88
        $187.65
        500
        $1.77
        $886.15
        1000
        $1.67
        $1 668.00
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