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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC100N10NSFGATMA1 DISTI # V72:2272_06378310 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3738 |
|
| BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 68In Stock |
|
| BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 68In Stock |
|
| BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC100N10NSFGATMA1 DISTI # 26194995 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3738 |
|
| BSC100N10NSFGXT DISTI # BSC100N10NSFGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 15000 |
|
| BSC100N10NSFGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1514 |
|
| BSC100N10NSF G DISTI # 726-BSC100N10NSFG | Infineon Technologies AG | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 RoHS: Compliant | 161 |
|
| BSC100N10NSFGATMA1 | Infineon Technologies AG | Single N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 5000Reel |
|
| BSC100N10NSFGATMA1 DISTI # 9064375P | Infineon Technologies AG | MOSFET N-CH 100V 11.4A OPTIMOS TDSON8, RL | 95 |
|
| BSC100N10NSFG | Infineon Technologies AG | 3392 | ||
| BSC100N10NSFG | Infineon Technologies AG | 100V,90A,N Channel Power MOSFET | 3800 |
|
| BSC100N10NSFGATMA1 DISTI # C1S322000598902 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 3738 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC100N10NSF G OMO.#: OMO-BSC100N10NSF-G |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |
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Mfr.#: BSC100N06LS3GATMA1 OMO.#: OMO-BSC100N06LS3GATMA1 |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC100N03LS G OMO.#: OMO-BSC100N03LS-G-1190 |
MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th |
|
Mfr.#: BSC100N03LSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
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Mfr.#: BSC100N06LS OMO.#: OMO-BSC100N06LS-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC100N10NS OMO.#: OMO-BSC100N10NS-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC105N10LSFG OMO.#: OMO-BSC105N10LSFG-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC100N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
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Mfr.#: BSC100N10NSF G OMO.#: OMO-BSC100N10NSF-G-128 |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |
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Mfr.#: BSC105N10LSF G OMO.#: OMO-BSC105N10LSF-G-128 |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 |