MR2A16AYS35R

Mfr. #:: MR2A16AYS35R
メーカー:: Everspin Technologies
説明:: NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM
ライフサイクル:: メーカー新製品
データシート:: MR2A16AYS35R データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: MR2A16AYS35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: MR2A16A

包装: テープ＆リール（TR）代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-44

作動温度: 0°C ~ 70°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 44-TSOP2 (10.2x18.4)

メモリー容量: 4M (256K x 16)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

アクセス時間: 35 ns

フォーマット-メモリ: 羊

最高作動温度: + 70 C

最低作動温度: 0 C

動作-供給-電流: 105 mA

インターフェイスタイプ: 平行

組織: 256 k x 16

データバス幅: 16 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 3 V

Tags: MR2A1, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A16AYS35R 評価とレビュー

M***r

Normal board, tracked

2019-07-17

M***l

works as expected. great. super fast shipping.

2019-05-14

A***a

According to the order.2 months for delivery.

2019-04-29

MR2A16AYS35R 説明

***ure Electronics: 4Mb, 256Kx16, 44-TSOP, 3.3V, 0 to +70C, T&R,

***et Europe: NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R

***i-Key: IC RAM 4MBIT PARALLEL 44TSOP2

MR2A16AYS35R 詳しくは

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

モデル	メーカー	説明	ストック	価格
MR2A16AYS35R DISTI # MR2A16AYS35REV-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$16.5053
MR2A16AYS35R DISTI # MR2A16AYS35R	Everspin Technologies	NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR2A16AYS35R) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€17.9900 3000:€17.1900 6000:€16.5900 9000:€15.3900 15000:€14.3900

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