SCT3080ALHRC11

SCT3080ALHRC11
Mfr. #:
SCT3080ALHRC11
メーカー:
Rohm Semiconductor
説明:
MOSFET 650V 30A 134W SIC 80mOhm TO-247N
ライフサイクル:
メーカー新製品
データシート:
SCT3080ALHRC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SCT3080ALHRC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247N-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
30 A
Rds On-ドレイン-ソース抵抗:
80 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.7 V
Vgs-ゲート-ソース間電圧:
- 4 V, 22 V
Qg-ゲートチャージ:
48 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
134 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
シリーズ:
SCT3x
トランジスタタイプ:
1 N-Channel
ブランド:
ロームセミコンダクター
フォワード相互コンダクタンス-最小:
3.8 S
立ち下がり時間:
16 ns
製品タイプ:
MOSFET
立ち上がり時間:
26 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
27 ns
典型的なターンオン遅延時間:
16 ns
Tags
SCT308, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
モデル メーカー 説明 ストック 価格
SCT3080ALHRC11
DISTI # SCT3080ALHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 450:$12.3488
  • 25:$14.7388
  • 10:$15.3760
  • 1:$16.7300
SCT3080ALHRC11
DISTI # 02AH4685
ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes0
  • 500:$10.3100
  • 250:$10.6500
  • 100:$12.1200
  • 50:$12.8700
  • 25:$14.2500
  • 10:$14.6800
  • 1:$15.6900
SCT3080ALHRC11
DISTI # 755-SCT3080ALHRC11
ROHM SemiconductorMOSFET 650V 30A 134W SIC 80mOhm TO-247N
RoHS: Compliant
450
  • 1:$16.7200
  • 10:$15.3700
  • 25:$14.7400
SCT3080ALHRC11
DISTI # TMOS2741
ROHM SemiconductorSiC-N 650V 80mOhm 30A TO247N
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$11.4900
SCT3080ALHRC11
DISTI # 3052184
ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W
RoHS: Compliant
0
  • 100:$17.3800
  • 50:$18.3700
  • 10:$19.4300
  • 5:$21.9100
  • 1:$22.5300
SCT3080ALHRC11ROHM SemiconductorMOSFET 650V 30A 134W SIC 80mOhm TO-247N
RoHS: Compliant
Americas -
    SCT3080ALHRC11
    DISTI # 3052184
    ROHM SemiconductorMOSFET, N-CH, 650V, 30A, 175DEG C, 134W0
    • 100:£10.3400
    • 50:£10.8000
    • 10:£11.2500
    • 5:£13.3800
    • 1:£13.5000
    画像 モデル 説明
    SCT3080ALHRC11

    Mfr.#: SCT3080ALHRC11

    OMO.#: OMO-SCT3080ALHRC11

    MOSFET 650V 30A 134W SIC 80mOhm TO-247N
    SCT3080KLHRC11

    Mfr.#: SCT3080KLHRC11

    OMO.#: OMO-SCT3080KLHRC11

    MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
    SCT3080ALGC11

    Mfr.#: SCT3080ALGC11

    OMO.#: OMO-SCT3080ALGC11

    MOSFET N-Ch 650V 30A Silicon Carbide SiC
    SCT3080KLGC11

    Mfr.#: SCT3080KLGC11

    OMO.#: OMO-SCT3080KLGC11

    MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
    SCT3080KLGC11

    Mfr.#: SCT3080KLGC11

    OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

    MOSFET NCH 1.2KV 31A TO247N
    SCT3080ALGC11

    Mfr.#: SCT3080ALGC11

    OMO.#: OMO-SCT3080ALGC11-ROHM-SEMI

    MOSFET N-CH 650V 30A TO247
    SCT3080ALHRC11

    Mfr.#: SCT3080ALHRC11

    OMO.#: OMO-SCT3080ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3080KLHRC11

    Mfr.#: SCT3080KLHRC11

    OMO.#: OMO-SCT3080KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    ストック:
    900
    注文中:
    2883
    数量を入力してください:
    SCT3080ALHRC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $16.72
    $16.72
    10
    $15.37
    $153.70
    25
    $14.74
    $368.50
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