STU16N65M5

STU16N65M5
Mfr. #:
STU16N65M5
メーカー:
STMicroelectronics
説明:
MOSFET N-CH 65V 12A MDMESH
ライフサイクル:
メーカー新製品
データシート:
STU16N65M5 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
STU16N65M5 詳しくは STU16N65M5 Product Details
製品属性
属性値
メーカー:
STMicroelectronics
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-251-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
12 A
Rds On-ドレイン-ソース抵抗:
299 mOhms
Vgs-ゲート-ソース間電圧:
25 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
90 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
高さ:
6.2 mm
長さ:
6.6 mm
シリーズ:
STI16N65M5
トランジスタタイプ:
1 N-Channel
幅:
2.4 mm
ブランド:
STMicroelectronics
立ち下がり時間:
7 ns
製品タイプ:
MOSFET
立ち上がり時間:
9 ns
ファクトリーパックの数量:
75
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
30 ns
典型的なターンオン遅延時間:
25 ns
単位重量:
0.139332 oz
Tags
STU16N6, STU16N, STU16, STU1, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in IPAK
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 650V, 12A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK
***r Electronics
Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK
***p One Stop
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmesh II plus 600V 11A
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ponent Sense
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***ser
MOSFETs 600V N-Channel MOSFET
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:7A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:21A; No. of Pins:3; Power Dissipation:83W; Power, Pd:83W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V
***th Star Micro
Transistor MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK
***ure Electronics
Single N-Channel 500 V 3 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ment14 APAC
MOSFET, N, 500V, 2.4A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:7.7A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:8.6ns; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
モデル メーカー 説明 ストック 価格
STU16N65M5
DISTI # 497-11402-5-ND
STMicroelectronicsMOSFET N-CH 650V 12A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
5In Stock
  • 1:$4.3500
STU16N65M5
DISTI # 511-STU16N65M5
STMicroelectronicsMOSFET N-CH 65V 12A MDMESH
RoHS: Compliant
0
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    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    2500
    数量を入力してください:
    STU16N65M5の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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