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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI5853DDC-T1-E3 DISTI # SI5853DDC-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5853DDC-T1-E3 DISTI # SI5853DDC-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5853DDC-T1-E3 DISTI # SI5853DDC-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5853DDC-T1-E3 DISTI # 15R5168 | Vishay Intertechnologies | P-CHANNEL 20-V (D-S) mosfet w/schottky RoHS: Not Compliant | 0 | |
| SI5853DDC-T1-E3 DISTI # 70616990 | Vishay Siliconix | SI5853DDC-T1-E3 P-channel MOSFET Transistor,3.5 A,20 V,8-Pin 1206 ChipFET RoHS: Not Compliant | 0 |
|
| SI5853DDC-T1-E3 | Vishay Intertechnologies | 6789 | ||
| SI5853DDCT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 9000 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI5853DDC-T1-E3 OMO.#: OMO-SI5853DDC-T1-E3 |
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET |
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Mfr.#: SI5853DDC-T1-E3 OMO.#: OMO-SI5853DDC-T1-E3-VISHAY |
IGBT Transistors MOSFET 20V 4.0A 3.1W 105mohm @ 4.5V |
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Mfr.#: SI5853DDC OMO.#: OMO-SI5853DDC-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDC-1 OMO.#: OMO-SI5853DDC-1-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDC-T1 OMO.#: OMO-SI5853DDC-T1-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDC-T1-GE3 OMO.#: OMO-SI5853DDC-T1-GE3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDC-T1E3 OMO.#: OMO-SI5853DDC-T1E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDC/CJ5853DDC OMO.#: OMO-SI5853DDC-CJ5853DDC-1190 |
ブランドニューオリジナル |
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Mfr.#: SI5853DDCT1E3 OMO.#: OMO-SI5853DDCT1E3-1190 |
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET |