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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FP75R12KT4B11BOSA1 DISTI # V99:2348_17558255 | Infineon Technologies AG | Trans IGBT Module N-CH 1200V 75A 385000mW 35-Pin Tray RoHS: Compliant | 9 |
|
| FP75R12KT4B11BOSA1 DISTI # V36:1790_17558255 | Infineon Technologies AG | Trans IGBT Module N-CH 1200V 75A 385000mW 35-Pin Tray RoHS: Compliant | 0 |
|
| FP75R12KT4B11BOSA1 DISTI # FP75R12KT4B11BOSA1-ND | Infineon Technologies AG | IGBT MODULE 1200V 75A Min Qty: 1 Container: Bulk | 79In Stock |
|
| FP75R12KT4B11BOSA1 DISTI # 31312429 | Infineon Technologies AG | Trans IGBT Module N-CH 1200V 75A 385000mW 35-Pin Tray RoHS: Compliant | 10 |
|
| FP75R12KT4B11BOSA1 DISTI # 27136486 | Infineon Technologies AG | Trans IGBT Module N-CH 1200V 75A 385000mW 35-Pin Tray RoHS: Compliant | 9 |
|
| FP75R12KT4B11BOSA1 DISTI # FP75R12KT4B11BOSA1 | Infineon Technologies AG | IGBT MODULE 1200V 75A - Bulk (Alt: FP75R12KT4B11BOSA1) Min Qty: 3 Container: Bulk | Americas - 0 | |
| FP75R12KT4B11BOSA1 DISTI # FP75R12KT4B11BOSA1 | Infineon Technologies AG | IGBT MODULE 1200V 75A - Trays (Alt: FP75R12KT4B11BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 | |
| FP75R12KT4B11BOSA1 DISTI # SP000355575 | Infineon Technologies AG | IGBT MODULE 1200V 75A (Alt: SP000355575) Min Qty: 1 | Europe - 0 | |
| FP75R12KT4_B11 DISTI # 84R7212 | Infineon Technologies AG | IGBT Module,Transistor Polarity:N Channel,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:385W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:35Pins,Product Range:- RoHS Compliant: Yes RoHS: Compliant | 0 | |
| FP75R12KT4B11BOSA1 DISTI # 34AC1531 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A,Transistor Polarity:N Channel,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:385W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes RoHS: Compliant | 6 |
|
| FP75R12KT4_B11 DISTI # 641-FP75R12KT4_B11 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 75A | 14 |
|
| FP75R12KT4B11BOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS: Compliant | 7 |
|
| FP75R12KT4B11 | Infineon Technologies AG | Europe - 5 | ||
| FP75R12KT4B11BOSA1 DISTI # 2781248 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A RoHS: Compliant | 6 |
|
| FP75R12KT4B11BOSA1 DISTI # 2781248 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 75A RoHS: Compliant | 6 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: FP751K1F9251B8 OMO.#: OMO-FP751K1F9251B8-1190 |
ブランドニューオリジナル |