SI2301CDS-T1-E3

Mfr. #:: SI2301CDS-T1-E3
メーカー:: Vishay
説明:: MOSFET P-CH 20V 3.1A SOT23-3
ライフサイクル:: メーカー新製品
データシート:: SI2301CDS-T1-E3 データシート
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詳しくは:: SI2301CDS-T1-E3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI2301CDS-E3

単位重量: 0.050717 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-236-3, SC-59, SOT-23-3

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: SOT-23-3 (TO-236)

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 1.6W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 405pF @ 10V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 3.1A (Tc)

Rds-On-Max-Id-Vgs: 112 mOhm @ 2.8A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 10nC @ 4.5V

Pd-電力損失: 860 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 35 ns

立ち上がり時間: 35 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: - 2.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Rds-On-Drain-Source-Resistance: 112 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 11 ns

チャネルモード: 強化

Tags: SI2301CDS-T1, SI2301CDS-T, SI2301C, SI2301, SI230, SI23, SI2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2301CDS-T1-E3 説明

***ical: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R

***Components: P-Ch MOSFET SOT-23 20V 112mohm @ 4.5V -

***ment14 APAC: MOSFET, P CH, -20V, -3.1A, SOT-23-3

***i-Key: MOSFET P-CH 20V 3.1A SOT23-3

***ure Electronics: P-CHANNEL 20-V (D-S) MOSFET

***ponent Sense: ''Si2301BDS MOS-FET Enh P 18 V 1.8 A

***ied Electronics & Automation: 20V 3.1A 1.6W 112mohm @ 4.5V

***: P-CHANNEL 20-V

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs:-400Mv; Power Dissipation Pd:1.6W; Product Range:- Rohs Compliant: No

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

SI2301CDS-T1-E3 詳しくは

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

モデル	メーカー	説明	ストック	価格
SI2301CDS-T1-E3 DISTI # V72:2272_07431534	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	2676	1000:$0.1277 500:$0.1442 250:$0.2169 100:$0.2182 25:$0.3061 10:$0.3069 1:$0.3886
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	69909In Stock	1000:$0.1184 500:$0.1525 100:$0.2545 10:$0.3850 1:$0.5500
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	69909In Stock	1000:$0.1184 500:$0.1525 100:$0.2545 10:$0.3850 1:$0.5500
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.1A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	69000In Stock	3000:$0.1040
SI2301CDS-T1-E3 DISTI # 31647599	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	2676	1000:$0.1277 500:$0.1442 250:$0.2169 100:$0.2182 46:$0.3061
SI2301CDS-T1-E3 DISTI # 30617107	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R RoHS: Compliant	750	500:$0.1887 100:$0.2104 50:$0.2384 16:$0.3379
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2301CDS-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 1895	1:$0.0609 30:$0.0609 75:$0.0599 150:$0.0599 375:$0.0599 750:$0.0599 1500:$0.0599
SI2301CDS-T1-E3 DISTI # SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2301CDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0546 6000:$0.0530 12000:$0.0508 18000:$0.0494 30000:$0.0481
SI2301CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI2301CDS-T1-E3 DISTI # 97W2628	Vishay Intertechnologies	MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes	2566	1000:$0.1670 500:$0.1870 100:$0.2330 50:$0.2700 25:$0.3080 10:$0.3450 1:$0.5100
SI2301CDS-T1-E3. DISTI # 30AC0135	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-3.1A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.6W,Product Range:- RoHS Compliant: No	0	1:$0.0550 6000:$0.0550 12000:$0.0550 18000:$0.0550 30000:$0.0550
SI2301CDS-T1-E3 DISTI # 70459660	Vishay Siliconix	20V 3.1A 1.6W 112mohm @ 4.5V RoHS: Compliant	0	3000:$0.2590 6000:$0.2410 12000:$0.2060
SI2301CDS-T1-E3 DISTI # 781-SI2301CDS-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant	20181	1:$0.5100 10:$0.3450 100:$0.2330 500:$0.1870 1000:$0.1410 3000:$0.1290 6000:$0.1210 9000:$0.1130 24000:$0.1040
SI2301CDS-T1-E3	Vishay Intertechnologies	RoHS: Compliant	1900Cut Tape/Mini-Reel	1:$0.1640 100:$0.1180 250:$0.1110 500:$0.1050 1500:$0.0928
SI2301CDS-T1-E3	Vishay Intertechnologies	P-Channel 20 V112 mO 5.5 nC SMT TrenchFET Power Mosfet - SOT-23 RoHS: Compliant	36000Reel	3000:$0.0835 6000:$0.0790 12000:$0.0772
SI2301CDS-T1-E3	Vishay Intertechnologies		248
SI2301CDS-T1-E3 DISTI # 2335284	Vishay Intertechnologies	MOSFET, P CH, -20V, -3.1A, SOT-23 RoHS: Compliant	2566	1000:$0.2520 500:$0.2970 100:$0.3690 10:$0.5460 1:$0.8080
SI2301CDS-T1-E3 DISTI # 2335284	Vishay Intertechnologies	MOSFET, P CH, -20V, -3.1A, SOT-23 RoHS: Compliant	3392	500:£0.1580 250:£0.1690 100:£0.1800 25:£0.2890 5:£0.3030
SI2301CDS-T1-E3 DISTI # XSFP00000007280	Vishay Siliconix	RectifierDiode,1Element,0.7A,600VV(RRM),Silicon,DO-219AB RoHS: Compliant	120000	120000:$0.1742 3000:$0.1916
SI2301CDS-T1-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas -

画像	モデル	説明
	Mfr.#: SI2301CDS-T1-GE3 OMO.#: OMO-SI2301CDS-T1-GE3	MOSFET -20V Vds 8V Vgs SOT-23
	Mfr.#: SI2301CDS-T1-GE3. OMO.#: OMO-SI2301CDS-T1-GE3-	MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
	Mfr.#: SI2301CDS OMO.#: OMO-SI2301CDS-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-G OMO.#: OMO-SI2301CDS-T1-G-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-GE3 (VISHAY) OMO.#: OMO-SI2301CDS-T1-GE3-VISHAY--1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-GE3 , MAX63 OMO.#: OMO-SI2301CDS-T1-GE3-MAX63-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-TI-GE3 OMO.#: OMO-SI2301CDS-TI-GE3-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-E3-CUT TAPE OMO.#: OMO-SI2301CDS-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2301CDS-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI2301CDS-T1-E3 OMO.#: OMO-SI2301CDS-T1-E3-VISHAY	MOSFET P-CH 20V 3.1A SOT23-3

SI2301CDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes