We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SQJ910AEP-T1-GE3 DISTI # V36:1790_14140420 | Vishay Intertechnologies | DUAL N-CHANNEL 30-V (D-S) 175C | 0 |
|
| SQJ910AEP-T1_GE3 DISTI # SQJ910AEP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ910AEP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SQJ910AEP-T1_GE3 DISTI # SQJ910AEP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ910AEP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SQJ910AEP-T1_GE3 DISTI # 76Y1548 | Vishay Intertechnologies | DUAL N-CHANNEL 30-V (D-S) 175C MOSFE | 0 |
|
| SQJ910AEP-T1_GE3 DISTI # 78-SQJ910AEP-T1_GE3 | Vishay Intertechnologies | MOSFET Dual N-Channel 30V AEC-Q101 Qualified RoHS: Compliant | 7974 |
|
| SQJ910AEPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SQJ910AEP-T1_GE3 DISTI # TMOS1494 | Vishay Intertechnologies | 2N-CH 30V 30A 7mOhm PPSO-8L RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: SQJ910AEP-T1_GE3 OMO.#: OMO-SQJ910AEP-T1-GE3 |
MOSFET Dual N-Channel 30V AEC-Q101 Qualified |
|
Mfr.#: SQJ910AEP-T2_GE3 OMO.#: OMO-SQJ910AEP-T2-GE3 |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8L |
|
Mfr.#: SQJ910AEP OMO.#: OMO-SQJ910AEP-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SQJ910AEPT1GE3 OMO.#: OMO-SQJ910AEPT1GE3-1190 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |