QPD1010

QPD1010
Mfr. #:
QPD1010
メーカー:
Qorvo
説明:
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
ライフサイクル:
メーカー新製品
データシート:
QPD1010 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
QPD1010 詳しくは
製品属性
属性値
メーカー
TriQuint(Qorvo)
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
QPD
包装
ワッフル
パーツエイリアス
1132873
取り付けスタイル
SMD / SMT
動作-温度-範囲
- 40 C to + 85 C
パッケージ-ケース
QFN-16
テクノロジー
GaN SiC
構成
独身
トランジスタタイプ
HEMT
利得
24.7 dB
出力電力
11 W
Pd-電力損失
13.5 W
最高作動温度
+ 85 C
最低作動温度
- 40 C
動作周波数
DC to 4 GHz
Id-連続-ドレイン-電流
400 mA
Vds-ドレイン-ソース-ブレークダウン-電圧
50 V
トランジスタ-極性
Nチャネル
開発キット
QPD1010-EVB1
Vgs-ゲート-ソース-ブレークダウン-電圧
- 2.8 V
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
モデル メーカー 説明 ストック 価格
QPD1010
DISTI # 772-QPD1010
QorvoRF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
RoHS: Compliant
40
  • 1:$20.5500
  • 25:$17.7700
  • 100:$15.3700
  • 250:$14.3000
  • 500:$13.3000
QPD1010-EVB1
DISTI # 772-QPD1010-EVB1
QorvoRF Development Tools DC-4GHz 10W 28-50V Eval Board
RoHS: Compliant
3
  • 1:$875.0000
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ブランドニューオリジナル
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Switching Power Supplies 48V 6.7A 320W P/S SINGLE OUTPUT
QPD-150-48

Mfr.#: QPD-150-48

OMO.#: OMO-QPD-150-48-QUALTEK

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可用性
ストック:
Available
注文中:
2500
数量を入力してください:
QPD1010の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$19.95
$19.95
10
$18.95
$189.52
100
$17.96
$1 795.50
500
$16.96
$8 478.75
1000
$15.96
$15 960.00
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