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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4435DYTRPBF DISTI # V72:2272_13891298 | Infineon Technologies AG | Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R RoHS: Compliant | 8 |
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| SI4435DYTRPBF DISTI # SI4435DYPBFCT-ND | Infineon Technologies AG | MOSFET P-CH 30V 8A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 5220In Stock |
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| SI4435DYTRPBF DISTI # SI4435DYPBFDKR-ND | Infineon Technologies AG | MOSFET P-CH 30V 8A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 5220In Stock |
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| SI4435DYTRPBF DISTI # SI4435DYPBFTR-ND | Infineon Technologies AG | MOSFET P-CH 30V 8A 8-SOIC Min Qty: 4000 Container: Tape & Reel (TR) | 4000In Stock |
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| SI4435DYTR DISTI # SI4435DYTR-ND | Infineon Technologies AG | MOSFET P-CH 30V 8A 8-SOIC Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI4435DYTRPBF DISTI # 32399733 | Infineon Technologies AG | Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R RoHS: Compliant | 3540 |
|
| SI4435DYTRPBF DISTI # SI4435DYTRPBF | Infineon Technologies AG | Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4435DYTRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 |
|
| SI4435DYTRPBF DISTI # SP001573756 | Infineon Technologies AG | Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SP001573756) Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| SI4435DYTRPBF DISTI # 39M3596 | Infineon Technologies AG | Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 39M3596) RoHS: Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SI4435DYTRPBF. DISTI # 28AC2139 | Infineon Technologies AG | TRENCH_MOSFETS ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| SI4435DYTRPBF DISTI # 31K5362 | Infineon Technologies AG | MOSFET Transistor, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4435DYTRPBF DISTI # 39M3596 | Infineon Technologies AG | P CHANNEL MOSFET, 8A,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W RoHS Compliant: Yes RoHS: Compliant | 351 |
|
| SI4435DYTRPBF DISTI # 70017416 | Infineon Technologies AG | MOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -8A,SO-8,PD 2.5W,VGS+/-20V,-55C RoHS: Compliant | 0 |
|
| SI4435DYTRPBF DISTI # 942-SI4435DYTRPBF | Infineon Technologies AG | MOSFET HEXFET P-CH Low 0.020 Ohm -30V RoHS: Compliant | 7824 |
|
| SI4435DYTRPBF | International Rectifier | 8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-8 | 25 |
|
| SI4435DYTRPBF | International Rectifier | 8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-8 | 682 |
|
| SI4435DYTRPBF | International Rectifier | 8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-8 | 8 |
|
| SI4435DYTRPBF DISTI # 1702264 | Infineon Technologies AG | On a Reel of 4000, SI4435DYTRPBF P-Channel MOSFET, 8 A, 30 V Si4435DYPbF, 8-Pin SO Infineon, RL Min Qty: 4000 Container: Reel | 0 |
|
| SI4435DYTR | International Rectifier | 2006 | ||
| SI4435DYTRPBF | International Rectifier | 10 |
| |
| SI4435DYTRPBF | Fairchild Semiconductor Corporation | 1913 | ||
| SI4435DYTRPBF | International Rectifier | 2934 | ||
| SI4435DYTRPBF DISTI # C1S322000510418 | Infineon Technologies AG | MOSFETs RoHS: Compliant Min Qty: 10 Container: Cut Tape | 3540 |
|
| SI4435DYTRPBF DISTI # 2577192RL | Infineon Technologies AG | MOSFET, P-CH, -30V, -8A, SOIC-8 RoHS: Compliant | 0 |
|
| SI4435DYTRPBF DISTI # 2577192 | Infineon Technologies AG | MOSFET, P-CH, -30V, -8A, SOIC-8 RoHS: Compliant | 11148 |
|
| SI4435DYTRPBF. DISTI # 1374896 | Infineon Technologies AG | P CHANNEL MOSFET, 8A RoHS: Compliant | 351 |
|
| SI4435DYTRPBF DISTI # 2577235 | Infineon Technologies AG | (Alternate Part Number: SP001573756 RoHS: Compliant | 0 |
|
| SI4435DYTRPBF DISTI # 2577192 | Infineon Technologies AG | MOSFET, P-CH, -30V, -8A, SOIC-8 RoHS: Compliant | 10932 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI4432-B1-FMR OMO.#: OMO-SI4432-B1-FMR |
RF Transceiver +20 dBm sub-GHz transmitter |
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Mfr.#: SI4431BDY-T1-E3 OMO.#: OMO-SI4431BDY-T1-E3 |
MOSFET 30V (D-S) 7.5A |
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Mfr.#: SI4438DY-T1-E3 OMO.#: OMO-SI4438DY-T1-E3-VISHAY |
IGBT Transistors MOSFET 30V 36A 7.8W |
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Mfr.#: SI4430BDY-T1-E3-S OMO.#: OMO-SI4430BDY-T1-E3-S-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4431BDYT1E3 OMO.#: OMO-SI4431BDYT1E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4431CDY-TI-GE3 OMO.#: OMO-SI4431CDY-TI-GE3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4435BDY OMO.#: OMO-SI4435BDY-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4435DDY-T1-E3 OMO.#: OMO-SI4435DDY-T1-E3-VISHAY |
MOSFET P-CH 30V 11.4A 8SOIC |
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Mfr.#: SI4435DY-TE2 OMO.#: OMO-SI4435DY-TE2-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4435FDY-T1-GE3 OMO.#: OMO-SI4435FDY-T1-GE3-VISHAY |
P-Channel 30 V (D-S) MOSFET |