SI7117DN-T1-E3

Mfr. #:: SI7117DN-T1-E3
メーカー:: Vishay
説明:: MOSFET P-CH 150V 2.17A 1212-8
ライフサイクル:: メーカー新製品
データシート:: SI7117DN-T1-E3 データシート
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ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7117DN-E3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR 1212-8

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 12.5W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 150V

入力-静電容量-Ciss-Vds: 510pF @ 25V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 2.17A (Tc)

Rds-On-Max-Id-Vgs: 1.2 Ohm @ 500mA, 10V

Vgs-th-Max-Id: 4.5V @ 250μA

ゲートチャージ-Qg-Vgs: 12nC @ 10V

Pd-電力損失: 3.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 11 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.1 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 150 V

Rds-On-Drain-Source-Resistance: 1.2 Ohms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 16 ns

典型的なターンオン遅延時間: 7 ns

チャネルモード: 強化

Tags: SI7117, SI711, SI71, SI7

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
SI7117DN-T1-E3 DISTI # V72:2272_07433923	Vishay Intertechnologies	Trans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	5860	3000:$0.4807 1000:$0.5249 500:$0.6522 250:$0.7463 100:$0.7483 25:$0.9222 10:$0.9261 1:$1.0686
SI7117DN-T1-E3 DISTI # SI7117DN-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 150V 2.17A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	25539In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI7117DN-T1-E3 DISTI # SI7117DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 150V 2.17A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	25539In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI7117DN-T1-E3 DISTI # SI7117DN-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 150V 2.17A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	3000:$0.5116
SI7117DN-T1-E3 DISTI # 30673591	Vishay Intertechnologies	Trans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	5860	3000:$0.4807 1000:$0.5249 500:$0.6522 250:$0.7463 100:$0.7483 25:$0.9222 12:$0.9261
SI7117DN-T1-E3 DISTI # SI7117DN-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7117DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 15000	3000:$0.5009 6000:$0.4989 12000:$0.4979 18000:$0.4969 30000:$0.4959
SI7117DN-T1-E3. DISTI # 16AC0262	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-21.7A,Drain Source Voltage Vds:-150V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:-4.5V,Power Dissipation Pd:3.2W,No. of Pins:8Pins , RoHS Compliant: No	15000	1:$0.5340 3000:$0.5340
SI7117DN-T1-E3 DISTI # 781-SI7117DN-T1-E3	Vishay Intertechnologies	MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	4290	1:$1.3300 10:$1.1000 100:$0.8400 500:$0.7230 1000:$0.5700 3000:$0.5320
SI7117DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, LLCC	1600	1001:$0.7000 201:$0.8000 1:$2.0000
SI7117DN-T1-E3	Vishay Intertechnologies	INSTOCK	1099
SI7117DN-T1-E3	Vishay Intertechnologies	MOSFET -150V Vds 20V Vgs PowerPAK 1212-8	Americas -
SI7117DN-T1-E3 DISTI # C1S803600929575	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5860	250:$0.7463 100:$0.7485 25:$0.9222 10:$0.9261

画像	モデル	説明
	Mfr.#: SI7117DN-T1-E3 OMO.#: OMO-SI7117DN-T1-E3	MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7117DN-T1-GE3 OMO.#: OMO-SI7117DN-T1-GE3	MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SI7117DN-T1-GE3 OMO.#: OMO-SI7117DN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V
	Mfr.#: SI7117DN OMO.#: OMO-SI7117DN-1190	ブランドニューオリジナル
	Mfr.#: SI7117DN-T1-E3 OMO.#: OMO-SI7117DN-T1-E3-VISHAY	MOSFET P-CH 150V 2.17A 1212-8

SI7117DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes