R8010ANX vs R8010 vs R8010SJ

 
PartNumberR8010ANXR8010R8010SJ
DescriptionMOSFET 10V Drive Nch MOSFET
ManufacturerROHM Semiconductor-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance560 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge62 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.8 mm--
Length15.4 mm--
ProductMOSFET--
SeriesR8010ANX--
Transistor Type1 N-channel--
TypePower MOSFET--
Width10.3 mm--
BrandROHM Semiconductor--
Forward Transconductance Min2.2 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time54 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time97 ns--
Typical Turn On Delay Time43 ns--
Part # AliasesR8010ANX--
Unit Weight0.090478 oz--
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