2DA1213

2DA1213O-13 vs 2DA1213Y-13 vs 2DA1213YQ-13

 
PartNumber2DA1213O-132DA1213Y-132DA1213YQ-13
DescriptionBipolar Transistors - BJT 1W -50VBipolar Transistors - BJT 1W -50VBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 2.5K
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-89-3SOT-89-3SOT-89-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 50 V- 50 V- 50 V
Collector Base Voltage VCBO- 50 V- 50 V- 50 V
Emitter Base Voltage VEBO- 5 V- 6 V- 6 V
Collector Emitter Saturation Voltage- 0.5 V- 500 mV- 0.5 V
Maximum DC Collector Current- 2 A- 2 A- 2.5 A
Gain Bandwidth Product fT160 MHz160 MHz160 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Series2DA122DA12-
DC Current Gain hFE Max140 at 500 mA, 2 V120 at 500 mA, 2 V240 at - 500 mA, - 2 V
Height1.5 mm1.5 mm-
Length4.5 mm4.5 mm-
PackagingReelReelReel
Width2.5 mm2.5 mm-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Continuous Collector Current- 2 A-- 2 A
DC Collector/Base Gain hfe Min70120120 at - 500 mA, - 2 V
Pd Power Dissipation1000 mW1000 mW1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity250025002500
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.004603 oz0.001834 oz-
Technology--Si
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
2DA1213O-13 Bipolar Transistors - BJT 1W -50V
2DA1213Y-13 Bipolar Transistors - BJT 1W -50V
2DA1213YQ-13 Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 2.5K
2DA1213Y-13 Bipolar Transistors - BJT 1W -50V
2DA1213O-13 Bipolar Transistors - BJT 1W -50V
2DA12130 ブランドニューオリジナル
2DA1213O ブランドニューオリジナル
2DA1213Y ブランドニューオリジナル
2DA1213Y-13-GIGA ブランドニューオリジナル
2DA1213O-7 ブランドニューオリジナル
2DA1213Y-13R ブランドニューオリジナル
2DA1213Y-7 ブランドニューオリジナル
Top