 |  | | |
| PartNumber | 2DD1664P-13 | 2DD1664 | 2DD1664P |
| Description | Bipolar Transistors - BJT 1000W 32Vceo | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 32 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 1 A | 1 A | 1 A |
| Gain Bandwidth Product fT | 280 MHz | 280 MHz | 280 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | 2DD16 | 2DD16 | 2DD16 |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Width | 2.48 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 82 | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001834 oz | 0.001834 oz | 0.001834 oz |
| Package Case | - | TO-243AA | TO-243AA |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | SOT-89-3 | SOT-89-3 |
| Power Max | - | 1W | 1W |
| Transistor Type | - | NPN | NPN |
| Current Collector Ic Max | - | 1A | 1A |
| Voltage Collector Emitter Breakdown Max | - | 32V | 32V |
| DC Current Gain hFE Min Ic Vce | - | 82 @ 100mA, 3V | 82 @ 100mA, 3V |
| Vce Saturation Max Ib Ic | - | 400mV @ 50mA, 500mA | 400mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | 100nA | 100nA |
| Frequency Transition | - | 280MHz | 280MHz |
| Pd Power Dissipation | - | 1000 mW | 1000 mW |
| Collector Emitter Voltage VCEO Max | - | 32 V | 32 V |
| Collector Base Voltage VCBO | - | 40 V | 40 V |
| Emitter Base Voltage VEBO | - | 5 V | 5 V |
| DC Collector Base Gain hfe Min | - | 82 | 82 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
2DD1664Q-13 | Bipolar Transistors - BJT 1000W 32Vceo | |
| 2DD1664R-13 | Bipolar Transistors - BJT 1000W 32Vceo | ||
| 2DD1664P-13 | Bipolar Transistors - BJT 1000W 32Vceo | ||
| 2DD1664P-13 | Bipolar Transistors - BJT 1000W 32Vceo | ||
| 2DD1664Q-13 | Bipolar Transistors - BJT 1000W 32Vceo | ||
| 2DD1664R-13 | Bipolar Transistors - BJT 1000W 32Vceo | ||
| 2DD1664 | ブランドニューオリジナル | ||
| 2DD1664P | ブランドニューオリジナル | ||
| 2DD1664P-7 | ブランドニューオリジナル | ||
| 2DD1664Q | ブランドニューオリジナル | ||
| 2DD1664Q-7 | ブランドニューオリジナル | ||
| 2DD1664R | ブランドニューオリジナル | ||
| 2DD1664R-7 | ブランドニューオリジナル |