| PartNumber | 2N3635L | 2N3635 | 2N3635L/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT PNP Ampl/Switch | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Central Semiconductor | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | Y | N |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-5-3 |
| Packaging | Tray | Bulk | Reel |
| Brand | Microchip / Microsemi | Central Semiconductor | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 500 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Transistor Polarity | - | PNP | PNP |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 140 V | 80 V |
| Collector Base Voltage VCBO | - | 140 V | 140 V |
| Emitter Base Voltage VEBO | - | 5 V | 5 V |
| Collector Emitter Saturation Voltage | - | 0.5 V | 0.6 V |
| Maximum DC Collector Current | - | 1 A | 1 A |
| Gain Bandwidth Product fT | - | 200 MHz | - |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Maximum Operating Temperature | - | + 150 C | + 200 C |
| Series | - | 2N3635 | - |
| Height | - | 6.6 mm | - |
| Length | - | 9.4 mm | - |
| Width | - | 9.4 mm | - |
| DC Collector/Base Gain hfe Min | - | 50 | 55 at 100 uA, 10 V |
| Pd Power Dissipation | - | 1000 mW | 1 W |
| Part # Aliases | - | 2N3635 BK | - |
| Technology | - | - | Si |
| DC Current Gain hFE Max | - | - | 300 at 50 mA, 10 V |