 |  | | |
| PartNumber | 2N6609 | 2N6609A | 2N6609G |
| Description | Bipolar Transistors - BJT 160Vcbo 140Vceo 160Vceb 7.0Vebo 16A | ||
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3-2 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | 140 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 1.4 V | - | - |
| Gain Bandwidth Product fT | 4 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N6609 | - | - |
| DC Current Gain hFE Max | 60 | - | - |
| Packaging | Bulk | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 16 A | - | - |
| DC Collector/Base Gain hfe Min | 5 | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 20 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2N6609 PBFREE | - | - |
