2SB1121S

2SB1121S-TD-E vs 2SB1121S-TD vs 2SB1121S-TD-EX

 
PartNumber2SB1121S-TD-E2SB1121S-TD2SB1121S-TD-EX
DescriptionBipolar Transistors - BJT BIP PNP 2A 25VINSTOCK
ManufacturerON SemiconductorSANYO-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-243-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 0.6 V--
Gain Bandwidth Product fT150 MHz--
Maximum Operating Temperature+ 150 C--
Series2SB1121--
DC Current Gain hFE Max400--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current- 2 A--
DC Collector/Base Gain hfe Min65--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
メーカー モデル 説明 RFQ
2SB1121S-TD-E Bipolar Transistors - BJT BIP PNP 2A 25V
2SB1121S-TD ブランドニューオリジナル
2SB1121S-TD-EX INSTOCK
ON Semiconductor
ON Semiconductor
2SB1121S-TD-E Bipolar Transistors - BJT BIP PNP 2A 25V
Top