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2SB1143

2SB1143S B1143 S vs 2SB1143S B772 vs 2SB1143S

 
PartNumber2SB1143S B1143 S2SB1143S B7722SB1143S
DescriptionBipolar Transistors - BJT HIGH-CURRENT SWITCHING
Manufacturer--ON Semiconductor
Product Category--Transistors (BJT) - Single
Series--2SB1143
Packaging--Bulk
Mounting Style--Through Hole
Package Case--TO-225AA, TO-126-3
Mounting Type--Through Hole
Supplier Device Package--TO-126ML
Configuration--Single
Power Max--1.5W
Transistor Type--PNP
Current Collector Ic Max--4A
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--140 @ 100mA, 2V
Vce Saturation Max Ib Ic--700mV @ 100mA, 2A
Current Collector Cutoff Max--1μA (ICBO)
Frequency Transition--150MHz
Pd Power Dissipation--10 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--- 50 V
Transistor Polarity--PNP
Collector Emitter Saturation Voltage--- 350 mV
Collector Base Voltage VCBO--- 60 V
Emitter Base Voltage VEBO--- 6 V
Maximum DC Collector Current--- 6 A
Gain Bandwidth Product fT--150 MHz
Continuous Collector Current--- 4 A
DC Collector Base Gain hfe Min--100
DC Current Gain hFE Max--560
メーカー モデル 説明 RFQ
ON Semiconductor
ON Semiconductor 		2SB1143T Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
2SB1143T Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
2SB1143S Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
2SB1143S B1143 S ブランドニューオリジナル
2SB1143S B772 ブランドニューオリジナル
2SB1143T B1143 T ブランドニューオリジナル
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