 |  | | |
| PartNumber | 2SB815-6-TB-E | 2SB815-6 | 2SB815-6-TB |
| Description | Bipolar Transistors - BJT BIP PNP 0.7A 15V | ||
| Manufacturer | ON Semiconductor | GP/SANYO | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | CP-3 | - | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 15 V | - | - |
| Collector Base Voltage VCBO | - 20 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 15 mV | - 15 mV | - |
| Maximum DC Collector Current | 1.5 A | 1.5 A | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Series | 2SB815 | 2SB815 | - |
| DC Current Gain hFE Max | 400 | 400 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 700 uA | - 700 uA | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000411 oz | - | - |
| Package Case | - | CP-3 | - |
| Pd Power Dissipation | - | 200 mW | - |
| Collector Emitter Voltage VCEO Max | - | 15 V | - |
| Collector Base Voltage VCBO | - | - 20 V | - |
| Emitter Base Voltage VEBO | - | - 5 V | - |
| DC Collector Base Gain hfe Min | - | 200 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| 2SB815-6-TB-E | Bipolar Transistors - BJT BIP PNP 0.7A 15V | ||
| 2SB815-6 | ブランドニューオリジナル | ||
| 2SB815-6-TB | ブランドニューオリジナル | ||
| 2SB815-6-TB-EX | BIP PNP 0.7A 15V | ||
ON Semiconductor |
2SB815-6-TB-E | Bipolar Transistors - BJT BIP PNP 0.7A 15V |