A2T21H3 stock, A2T21H3, A2T21H360-24SR6

A2T21H360-24SR6 vs A2T21H360-23NR6


PartNumber	A2T21H360-24SR6	A2T21H360-23NR6
Description	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
Manufacturer	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y
Technology	Si	Si
Packaging	Reel	Reel
Brand	NXP / Freescale	NXP Semiconductors
Product Type	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	150	150
Subcategory	MOSFETs	MOSFETs
Part # Aliases	935318247128	935322358528
Unit Weight	0.303504 oz	0.186807 oz
Transistor Polarity	-	Dual N-Channel
Id Continuous Drain Current	-	2.4 A
Vds Drain Source Breakdown Voltage	-	- 500 mV, 5 V
Gain	-	16.8 dB
Output Power	-	63 W
Minimum Operating Temperature	-	- 40 C
Maximum Operating Temperature	-	+ 150 C
Mounting Style	-	SMD/SMT
Package / Case	-	OM-1230-4
Operating Frequency	-	2110 MHz to 2200 MHz
Type	-	RF Power MOSFET
Number of Channels	-	2 Channel
Moisture Sensitive	-	Yes
Vgs Gate Source Voltage	-	- 6 V, 10 V
Vgs th Gate Source Threshold Voltage	-	0.8 V

Search Part Number : "A2T21H3", Match & Start with "A2T21H3" - Total : 5

メーカー	モデル	説明
NXP / Freescale	A2T21H360-24SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
NXP Semiconductors	A2T21H360-23NR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
	A2T21H360-24SR6	IC TRANS RF LDMOS
	A2T21H360-23NR6	RF TRANS 2.1GHZ 360W OM1230-4L2S
	A2T21H360-23N	ブランドニューオリジナル