 | |  | |
| PartNumber | ALD210808SCL | ALD210814SCL | ALD210814PCL |
| Description | MOSFET Quad N-Ch Matched Pr VGS=0.0V | MOSFET Quad N-Ch Matched Pr VGS=0.0V | MOSFET Quad N-Ch Matched Pr VGS=0.0V |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | SOIC-16 | SOIC-16 | PDIP-16 |
| Number of Channels | 4 Channel | 4 Channel | 4 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 10 V | 10 V | 10 V |
| Id Continuous Drain Current | 70 mA | 70 mA | 70 mA |
| Rds On Drain Source Resistance | 25 Ohms | 25 Ohms | 25 Ohms |
| Vgs th Gate Source Threshold Voltage | 780 mV | 1.4 V | 1.4 V |
| Vgs Gate Source Voltage | 10.6 V | 10.6 V | 10.6 V |
| Minimum Operating Temperature | 0 C | 0 C | 0 C |
| Maximum Operating Temperature | + 70 C | + 70 C | + 70 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Quad | Quad | Quad |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | EPAD | EPAD | EPAD |
| Packaging | Tube | Tube | Tube |
| Series | ALD210808S | ALD210814S | ALD210814P |
| Transistor Type | 4 N-Channel | 4 N-Channel | 4 N-Channel |
| Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Unit Weight | 0.023492 oz | 0.023492 oz | 0.036156 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD212902SAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | |
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| ALD212908SAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
| ALD212908PAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
| ALD212902PAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
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| ALD212900PAL | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212900APAL | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212914SAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
| ALD210814SCL | MOSFET Quad N-Ch Matched Pr VGS=0.0V | ||
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| ALD212908ASAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
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| ALD212900APAL | IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212900ASAL | IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212900SAL | IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212900PAL | IGBT Transistors MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | ||
| ALD212908APAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
| ALD210814SCL | MOSFET Quad N-Ch Matched Pr VGS=0.0V | ||
| ALD210814PCL | MOSFET Quad N-Ch Matched Pr VGS=0.0V | ||
| ALD212908ASAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
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| ALD210808PCL | MOSFET Quad N-Ch Matched Pr VGS=0.0V | ||
| ALD212914SAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
| ALD210808SCL | MOSFET Quad N-Ch Matched Pr VGS=0.0V | ||
| ALD212908SAL | MOSFET Dual N-Ch Matched Pr VGS=0.0V | ||
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