 |  |  | |
| PartNumber | ALD111910SAL | ALD111933MAL | ALD111910MAL |
| Description | MOSFET Dual N-Ch FET EPAD Matched Pair Array | MOSFET Dual N-Channel | MOSFET Dual N-Ch FET EPAD Matched Pair Array |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOIC-8 | MSOP-8 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Dual | Dual | Dual |
| Packaging | Tube | Tube | Tube |
| Series | ALD111910S | ALD111933M | ALD111910M |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Vds Drain Source Breakdown Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 6.9 mA | - |
| Rds On Drain Source Resistance | - | 500 Ohms | - |
| Vgs Gate Source Voltage | - | 10.6 V | - |
| Minimum Operating Temperature | - | 0 C | - |
| Maximum Operating Temperature | - | + 70 C | - |
| Pd Power Dissipation | - | 500 mW (1/2 W) | - |
| Channel Mode | - | Depletion | - |
| Product | - | MOSFET Small Signal | - |
| Type | - | MOSFET | - |
| Forward Transconductance Min | - | 0.0014 S | - |
| Typical Turn Off Delay Time | - | 10 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Unit Weight | - | 0.004938 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD111933SAL | MOSFET Dual N-Channel | |
| ALD111910SAL | MOSFET Dual N-Ch FET EPAD Matched Pair Array | ||
| ALD111933MAL | MOSFET Dual N-Channel | ||
| ALD111910MAL | MOSFET Dual N-Ch FET EPAD Matched Pair Array | ||
| ALD111933PAL | MOSFET Dual N-Channel | ||
| ALD111933PAL | MOSFET 2N-CH 10.6V 8DIP |