APT150GN60L

APT150GN60LDQ4G vs APT150GN60LDP4G vs APT150GN60LDQ40

 
PartNumberAPT150GN60LDQ4GAPT150GN60LDP4GAPT150GN60LDQ40
DescriptionIGBT Modules FG, IGBT, 600V, 100A,TO-264, RoHS
ManufacturerMicrochip--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Carbide Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.45 V--
Continuous Collector Current at 25 C220 A--
Gate Emitter Leakage Current600 nA--
Pd Power Dissipation536 W--
Package / CaseTO-264-3--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandMicrochip / Microsemi--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage30 V--
Product TypeIGBT Modules--
Factory Pack Quantity1--
SubcategoryIGBTs--
Unit Weight0.352740 oz--
メーカー モデル 説明 RFQ
Microchip / Microsemi
Microchip / Microsemi
APT150GN60LDQ4G IGBT Modules FG, IGBT, 600V, 100A,TO-264, RoHS
APT150GN60LDQ4G Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-264
APT150GN60LDP4G ブランドニューオリジナル
APT150GN60LDQ40 ブランドニューオリジナル
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