APT25GP

APT25GP120BDQ1G vs APT25GP120BG vs APT25GP90BDQ1G

 
PartNumberAPT25GP120BDQ1GAPT25GP120BGAPT25GP90BDQ1G
DescriptionIGBT Transistors FG, IGBT, 1200V, TO-247, RoHSIGBT Transistors FG, IGBT, 1200V, 25A, TO-247, RoHSIGBT Transistors
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.3 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C69 A--
Pd Power Dissipation417 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
Continuous Collector Current Ic Max69 A--
Height5.31 mm--
Length21.46 mm--
Operating Temperature Range- 55 C to + 150 C--
Width16.26 mm--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Continuous Collector Current69 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Unit Weight1.340411 oz--
Series--POWER MOS 7R
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247 [B]
Power Max--417W
Reverse Recovery Time trr---
Current Collector Ic Max--72A
Voltage Collector Emitter Breakdown Max--900V
IGBT Type--PT
Current Collector Pulsed Icm--110A
Vce on Max Vge Ic--3.9V @ 15V, 25A
Switching Energy--370μJ (off)
Gate Charge--110nC
Td on off 25°C--13ns/55ns
Test Condition--600V, 40A, 4.3 Ohm, 15V
メーカー モデル 説明 RFQ
Microchip / Microsemi
Microchip / Microsemi
APT25GP120BDQ1G IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
APT25GP120BG IGBT Transistors FG, IGBT, 1200V, 25A, TO-247, RoHS
APT25GP90BDQ1G IGBT Transistors
APT25GP120BDQ1G IGBT Transistors
APT25GP120B ブランドニューオリジナル
APT25GP120BDF1 ブランドニューオリジナル
APT25GP120BDQ1 ブランドニューオリジナル
APT25GP90BDF1 ブランドニューオリジナル
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