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| PartNumber | APT80GP60JDQ3 | APT80GP60J | APT80GP60B2G |
| Description | IGBT Modules FG, IGBT-COMBI, 600V, 80A, SOT-227 | IGBT Modules FG, IGBT, 600V, 80A, SOT-227 | IGBT Modules FG, IGBT, 600V, 80A, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.2 V | 2.2 V | 2.2 V |
| Continuous Collector Current at 25 C | 151 A | 151 A | 100 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Pd Power Dissipation | 462 W | 462 W | 1.041 kW |
| Package / Case | ISOTOP-4 | ISOTOP-4 | T-Max-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Maximum Gate Emitter Voltage | 30 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT80GP60JDQ3 | IGBT Modules FG, IGBT-COMBI, 600V, 80A, SOT-227 | |
| APT80GP60J | IGBT Modules FG, IGBT, 600V, 80A, SOT-227 | ||
| APT80GP60B2G | IGBT Modules FG, IGBT, 600V, 80A, TO-247 T-MAX, RoHS | ||
| APT80GP60J | IGBT 600V 151A 462W SOT227 | ||
| APT80GP60JDQ3 | POWER IGBT TRANSISTOR | ||
| APT80GP60B2 | ブランドニューオリジナル | ||
| APT80GP60B2G | Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) T-MAX | ||
| APT80GP60JDF3 | ブランドニューオリジナル |