APTGT400U

APTGT400U120D4G vs APTGT400U170D4G vs APTGT400U170DAG

 
PartNumberAPTGT400U120D4GAPTGT400U170D4GAPTGT400U170DAG
DescriptionIGBT Modules DOR CC7033IGBT Modules CC7019POWER MOSFET TRANSISTOR
ManufacturerMicrochipMicrochip-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV1.7 kV-
Collector Emitter Saturation Voltage1.7 V2 V-
Continuous Collector Current at 25 C650 A800 A-
Gate Emitter Leakage Current600 nA400 nA-
Pd Power Dissipation1.785 kW2.08 kW-
Package / CaseD4-5D4-5-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
PackagingBulkBulk-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Unit Weight12.345887 oz12.345887 oz-
メーカー モデル 説明 RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGT400U120D4G IGBT Modules DOR CC7033
APTGT400U170D4G IGBT Modules CC7019
APTGT400U170DAG POWER MOSFET TRANSISTOR
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