 | | | |
| PartNumber | APTGT75DH120T3G | APTGT75DH120TG | APTGT75DH60T1G |
| Description | IGBT Modules DOR CC3046 | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 600 V |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.5 V |
| Continuous Collector Current at 25 C | 110 A | 110 A | 100 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 600 nA |
| Pd Power Dissipation | 357 W | 357 W | 250 W |
| Package / Case | SP3-32 | SP4 | SP1-12 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 125 C | + 100 C |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 3.880136 oz | 2.821917 oz |
| Technology | - | - | Si |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT75DH120T3G | IGBT Modules DOR CC3046 | |
| APTGT75DH120TG | IGBT Modules Power Module - IGBT | ||
| APTGT75DH60T1G | IGBT Modules Power Module - IGBT |