 | | | |
| PartNumber | APTGT75H60T1G | APTGT75H60T2G | APTGT75H120TG |
| Description | IGBT Modules DOR CC8024 | IGBT Modules CC20006 | IGBT Modules DOR CC4061 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Full Bridge | Full Bridge | Full Bridge |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 1.7 V |
| Continuous Collector Current at 25 C | 100 A | 100 A | 110 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 400 nA |
| Pd Power Dissipation | 250 W | 250 W | 357 W |
| Package / Case | SP1-12 | - | SP4 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 125 C |
| Packaging | Tube | Bulk | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | - | 3.880136 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT75H60T1G | IGBT Modules DOR CC8024 | |
| APTGT75H60T2G | IGBT Modules CC20006 | ||
| APTGT75H60T3G | IGBT Modules DOR CC3019 | ||
| APTGT75H120TG | IGBT Modules DOR CC4061 | ||
| APTGT75H60T2G | POWER MOD IGBT3 FULL BRIDGE SP2 |